Magnetoresistance in a High Mobility Two-Dimensional Electron System as a Function of Sample Geometry

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Bockhorn, L.; Hodaei, A.; Schuh, D.; Wegscheider, W.; Haug, R. J.: Magnetoresistance in a High Mobility Two-Dimensional Electron System as a Function of Sample Geometry. In: Journal of Physics Conference Series 456 (2013), UNSP 012003. DOI: http://dx.doi.org/10.1088/1742-6596/456/1/012003

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Sum total of downloads: 125




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Abstract: 
In a high mobility two-dimensional electron gas (2DEG) realized in a GaAs/Al0.3Ga0.7As quantum well we observe changes in the Shubnikov-de Haas oscillations (SdHO) and in the Hall resistance for different sample geometries. We observe for each sample geometry a strong negative magnetoresistance around zero magnetic field which consists of a peak around zero magnetic field and of a huge magnetoresistance at larger fields. The peak around zero magnetic field is left unchanged for different geometries.
License of this version: CC BY 3.0 Unported
Document Type: Article
Publishing status: publishedVersion
Issue Date: 2013
Appears in Collections:Fakultät für Mathematik und Physik

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pos. country downloads
total perc.
1 image of flag of Germany Germany 92 73.60%
2 image of flag of United States United States 15 12.00%
3 image of flag of China China 7 5.60%
4 image of flag of Netherlands Netherlands 2 1.60%
5 image of flag of Denmark Denmark 2 1.60%
6 image of flag of Turkey Turkey 1 0.80%
7 image of flag of Norway Norway 1 0.80%
8 image of flag of Indonesia Indonesia 1 0.80%
9 image of flag of Hungary Hungary 1 0.80%
10 image of flag of Czech Republic Czech Republic 1 0.80%
    other countries 2 1.60%

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