Classification of defective regions in p-type multicrystalline silicon by comparing luminescence images measured under different conditions

Download statistics - Document (COUNTER):

Krain, R.; Beljakova, S.; Herlufsen, S.; Krieger, M.; Schmidt, J.: Classification of defective regions in p-type multicrystalline silicon by comparing luminescence images measured under different conditions. In: Energy Procedia 38 (2013), S. 101-107. DOI: https://doi.org/10.1016/j.egypro.2013.07.255

Repository version

To cite the version in the repository, please use this identifier: https://doi.org/10.15488/4041

Selected time period:

year: 
month: 

Sum total of downloads: 84




Thumbnail
Abstract: 
In this contribution, we apply three different camera-based luminescence imaging techniques to mc-Si wafers and solar cells, fabricated on neighboring wafers. On wafer level, we determine the spatially-resolved carrier lifetime using calibrated photoluminescence lifetime imaging. On the solar cell level, we use band-to-band electroluminescence and sub-band-gap electroluminescence imaging for the characterisation. We analyze the differences obtained by the different techniques in specific defective areas. Characteristic regions are additionally examined using deep-level transient spectroscopy (DLTS). Comparing different luminescence images, we find different signal correlations in selected regions of the wafers and the neighboring cells presumably caused by different types of defects, which react more or less effective on the phosphorus gettering during the solar cell process. DLTS spectra show that in the edge region of the wafer close to the crucible, FeB pairs are present in the wafer as well as in the cell. However, the FeB concentration in the cell is, due to phosphorus gettering during the cell process, reduced by one order of magnitude. In regions which appear as very recombination-active defect clusters in the solar cell, we detect ZnB pairs by DLTS analysis. Note that the ZnB itself is a shallow centre and therefore expected to be not strong recombination active. However, our measurements reveal that Zn is present in regions with increased recombination activity, which is also in good agreement with the high total Zn concentration measured in the mc-Si ingot. We hence conjecture that dislocation clusters decorated by Zn are responsible for the non-getterable defect regions.
License of this version: CC BY-NC-ND 3.0 Unported
Document Type: article
Publishing status: publishedVersion
Issue Date: 2013
Appears in Collections:An-Institute

distribution of downloads over the selected time period:

downloads by country:

pos. country downloads
total perc.
1 image of flag of Germany Germany 52 61.90%
2 image of flag of United States United States 11 13.10%
3 image of flag of China China 8 9.52%
4 image of flag of Vietnam Vietnam 4 4.76%
5 image of flag of No geo information available No geo information available 2 2.38%
6 image of flag of Spain Spain 2 2.38%
7 image of flag of Russian Federation Russian Federation 1 1.19%
8 image of flag of India India 1 1.19%
9 image of flag of Denmark Denmark 1 1.19%
10 image of flag of Czech Republic Czech Republic 1 1.19%
    other countries 1 1.19%

Further download figures and rankings:


Hinweis

Zur Erhebung der Downloadstatistiken kommen entsprechend dem „COUNTER Code of Practice for e-Resources“ international anerkannte Regeln und Normen zur Anwendung. COUNTER ist eine internationale Non-Profit-Organisation, in der Bibliotheksverbände, Datenbankanbieter und Verlage gemeinsam an Standards zur Erhebung, Speicherung und Verarbeitung von Nutzungsdaten elektronischer Ressourcen arbeiten, welche so Objektivität und Vergleichbarkeit gewährleisten sollen. Es werden hierbei ausschließlich Zugriffe auf die entsprechenden Volltexte ausgewertet, keine Aufrufe der Website an sich.

Search the repository


Browse