The influence of crystallographic orientation on the wetting of silicon on quartz single crystals

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Wei, D.; Gebensleben, T.; Diestel, L.; Alphei, L.; Becker, V.; Becker, J.A.: The influence of crystallographic orientation on the wetting of silicon on quartz single crystals. In: Journal of Materials Science 46 (2011), Nr. 10, S. 3436-3444. DOI: https://doi.org/10.1007/s10853-010-5246-1

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Sum total of downloads: 354




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Abstract: 
Dynamic hexagonal spreading patterns of small silicon droplets on the basal plane (001) of quartz were observed by video microscopy. A detailed analysis of the hexagonal triple line demonstrates that the patterns show slight chiral distortions that can be attributed to the screw axis of the substrate crystal. This article reveals the detailed influence of crystal symmetry on the anisotropy of reactive wetting. In this context, a first discussion about the interplay of wetting and etching of a crystal is provided.
License of this version: CC BY-NC 3.0 Unported
Document Type: Article
Publishing status: publishedVersion
Issue Date: 2011
Appears in Collections:Naturwissenschaftliche Fakultät

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pos. country downloads
total perc.
1 image of flag of Germany Germany 273 77.12%
2 image of flag of United States United States 46 12.99%
3 image of flag of China China 14 3.95%
4 image of flag of France France 6 1.69%
5 image of flag of No geo information available No geo information available 2 0.56%
6 image of flag of Ukraine Ukraine 2 0.56%
7 image of flag of Russian Federation Russian Federation 2 0.56%
8 image of flag of Indonesia Indonesia 2 0.56%
9 image of flag of Japan Japan 1 0.28%
10 image of flag of Czech Republic Czech Republic 1 0.28%
    other countries 5 1.41%

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