Reiter, S.; Koper, N.; Reineke-Koch, R.; Larionova, Y.; Turcu, M. et al.: Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions. In: Energy Procedia 92 (2016), S. 199-204. DOI: https://doi.org/10.1016/j.egypro.2016.07.057
Zusammenfassung: | |
We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle spectroscopic ellipsometry. Moreover, we investigate the effect of different doping levels in the poly-Si on free carrier absorption (FCA). Thereby, we demonstrate that the FCA in poly-Si can be described by a model developed for crystalline silicon (c-Si) at a first approximation. The optical properties of hydrogenated amorphous silicon layers (a-Si:H) are also investigated as a reference. With ray tracing simulations the absorption losses of poly-Si and of the a-Si:H layers are quantified with respect to the film thickness. Based on this approach we find that the short-circuit current density losses due to parasitic absorption of poly-Si layers are significantly lower when compared to a-Si:H layers of the same thickness. For example the short-circuit current density loss due to a 20 nm thick p-type poly-Si layer is around 1.1 mA/cm2, whereas a 20 nm thick p-type a-Si:H layer leads to a loss of around 3.5 mA/cm2. | |
Lizenzbestimmungen: | CC BY-NC-ND 4.0 Unported |
Publikationstyp: | Article |
Erstveröffentlichung: | 2016 |
Die Publikation erscheint in Sammlung(en): | Fakultät für Mathematik und Physik |
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