Rienäcker, M.; Merkle, A.; Römer, U.; Kohlenberg, H.; Krügener, J. et al.: Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities. In: Energy Procedia 92 (2016), S. 412-418. DOI: https://doi.org/10.1016/j.egypro.2016.07.121
Abstract: | |
We report on ion-implanted, inkjet patterned back junction back contact silicon solar cells with POLysilicon on Oxide (POLO) junctions for both polarities – n+ doped BSF and p+ doped emitter. The recombination behavior is investigated at two different processing stages: before and after trench separation of p+ and n+ regions within polysilicon (poly-Si). Before trench separation, we find a systematic dependence of the recombination behavior on the BSF index, i.e. the p+n+-junction meander length in the poly-Si. Obviously, recombination at the p+n+-junction in the poly-Si limits the implied open circuit voltage Voc,impl. at one sun illumination and the implied pseudo fill factor pFFimpl. to 695 mV and 80%, respectively. After trench isolation, however, Voc,impl (pFFimpl.) values increase up to 730 mV (85.5%), corresponding to a pseudo-efficiency of 26.2% for an assumed short circuit current density Jsc of 42 mA/cm2. We demonstrate a photolithography-free back junction back contacted solar cell with p-type and n-type POLO junctions with an in-house measured champion efficiency of 23.9% on a designated area of 3.97 cm2. This efficiency is mainly limited by the imperfect passivation in the undoped trench regions and at the undoped front side. | |
License of this version: | CC BY-NC-ND 4.0 Unported |
Document Type: | Article |
Issue Date: | 2016 |
Appears in Collections: | Fakultät für Mathematik und Physik |
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