Solar cell emitter design with PV-tailored implantation

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Ohrdes, T.; Steingrube, S.; Wagner, H.; Zechner, C.; Letay, G. et al.: Solar cell emitter design with PV-tailored implantation. In: Energy Procedia 8 (2011), S. 167-173. DOI: https://doi.org/10.1016/j.egypro.2011.06.119

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Sum total of downloads: 129




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Abstract: 
A potentially cost-effective ion implanter for solar cells has become commercially available very recently. As the emitter dopant profiles differ from the standard diffusions, a combination of process simulation and device simulation is used to predict possible applications as front emitter. The simulations show that ion energies of 10 to 30 keV and doses in the range of 5×1014 to 7×1015 cm-2 are sufficient for reducing the phosphorus peak density and, hence, obtaining cell efficiency levels above 20%, if appropriate surface passivation and wafer materials are used. The simulations strongly indicate, however, that cell efficiency improves only marginally if the cell has a fully metallized rear Al-BSF and a boron-doped Cz base in the degraded state. Simulated cells with a local rear Al-BSF show an efficiency improvement of more than 0.3% absolute in the degraded state.
License of this version: CC BY-NC-ND 3.0
Document Type: article
Publishing status: publishedVersion
Issue Date: 2011
Appears in Collections:Fakultät für Mathematik und Physik

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1 image of flag of Germany Germany 126 97.67%
2 image of flag of Philippines Philippines 1 0.78%
3 image of flag of Greece Greece 1 0.78%
4 image of flag of Finland Finland 1 0.78%

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