Browsing by Subject "single-electron tunneling"

Browsing by Subject "single-electron tunneling"

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  • Könemann, J.; Fal'ko, V.I.; Maude, D.K.; Haug, Rolf J. (College Park, MD : American Institute of Physics, 2005)
    By single-electron tunneling spectroscopy we investigate the difference in spin splitting of single-electron resonances in a double-barrier structure subjected to a magnetic field perpendicular (Δ⊥) and parallel (Δ∥) to ...
  • Fricke, Christian; Hohls, Frank; Wegscheider, W.; Haug, Rolf J. (College Park, MD : American Physical Society, 2007)
    We explore the full counting statistics of single-electron tunneling through a quantum dot using a quantum point contact as noninvasive high bandwidth charge detector. The distribution of counted tunneling events is measured ...
  • Wagner, Timo (Hannover : Institutionelles Repositorium der Leibniz Universität Hannover, 2018)
    In dieser Arbeit werden zwei verschiedene experimentelle Ansätze untersucht, die stochastischen Fluktuationen (Schrotrauschen) zwischen den Einzelelektronen-Tunnelereignissen in einem Quantenpunkt zu kontrollieren. Die ...
  • Rogge, M.C.; Pierz, Klaus; Haug, Rolf J. (College Park, MD : American Institute of Physics, 2013)
    We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on easily tunable gate voltages, one, two or three quantum dots are found. They are investigated in transport and charge detection. ...
  • Rogge, M.C.; Räsänen, E.; Haug, Rolf J. (College Park, MD : American Institute of Physics, 2011)
    A lateral quantum dot with approx. 50 electrons is analyzed in high perpendicular magnetic fields. In a regime with two Landau levels (LL) in the quantum dot information about the spin structure is gained by investigating ...
  • Könemann, Jens; Kubala, Björn; König, Jürgen; Haug, Rolf J. (College Park, MD : American Physical Society, 2006)
    Single-electron tunneling through a zero-dimensional state in an asymmetric double-barrier resonant-tunneling structure is studied. The broadening of steps in the I-V characteristics is found to strongly depend on the ...