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Atomic-Layer-Deposited Al2O3 as Effective Barrier against the Diffusion of Hydrogen from SiNx:H Layers into Crystalline Silicon during Rapid Thermal Annealing

Helmich, Lailah; Walter, Dominic C.; Bredemeier, Dennis; Schmidt, Jan (Weinheim : Wiley-VCH, 2020)

Stacks of hydrogen-lean aluminum oxide, deposited via plasma-assisted atomic-layer-deposition, and hydrogen-rich plasma-enhanced chemical vapor-deposited silicon nitride (SiNx) are applied to boron-doped float-zone silicon ...
Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation

Roy Chaudhuri, A.; Fissel, Andreas; Osten, Hans Jörg (Cambridge : Cambridge University Press, 2017)

Epitaxial layers of insulating binary lanthanide oxides have been considered as potential alternative to conventional SiO2 for gate dielectric application in future Si-based MOSFET devices, which was investigated in more ...
Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon

Schmidt, Jan; Bothe, Karsten; Voronkov, Vladimir V.; Falster, Robert (Weinheim : Wiley-VCH Verlag, 2019)

A conflict between previous and recently published data on the two-stage light-induced degradation (LID) of carrier lifetime in boron-doped oxygen-containing crystalline silicon is addressed. The previous experiments showed ...
Light and elevated Temperature Induced Degradation (LeTID) of the carrier lifetime in multicrystalline silicon

Bredemeier, Dennis (Hannover : Institutionelles Repositorium der Leibniz Universität Hannover, 2020)

Solar cells fabricated on multicrystalline silicon show a pronounced degradation of their energy conversion efficiency under illumination at elevated temperature. This effect is frequently denoted LeTID (’Light and elevated ...
Local determination of the amount of integration of an atom into a crystal surface

Volgmann, K.; Gawronski, H.; Zaum, C.; Rusina, G.G.; Borisova, S.D.; Chulkov, E.V.; Morgenstern, K. (London : Nature Publishing Group, 2014)

Collective vibrational modes of crystal lattices, called phonons, determine fundamental material properties, such as their thermal and electrical conductivities. Bulk phonon spectra are influenced by point defects. More ...
Long-Persistent Photoconductivity in Transistor Structures Made from Thin ZrS3-Films

Thole, Lars; Ben Kalefa, Asem; Belke, Christopher; Locmelis, Sonja; Bockhorn, Lina; Behrens, Peter; Haug, Rolf J. (Washington, DC : ACS Publications, 2023)

In the search for two-dimensional (2D) materials, transition-metal trichalcogenides (TMTCs) have emerged as promising candidates for optoelectronic applications. Here, we show a very long-lasting persistent photoconductivity ...
Recombination models for defects in silicon solar cells

Steingrube, Silke (Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2011)

[no abstract]
Transmission amplitudes from Bethe ansatz equations

Doikou, Anastasia; Karaiskos, Nikos (New York, NY : Springer International Publishing, 2013)

We consider the Heisenberg spin chain in the presence of integrable spin defects. Using the Bethe ansatz methodology, we extract the associated transmission amplitudes, that describe the interaction between the particle-like ...

Now showing items 1-8 of 8

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