Auflistung nach Schlagwort "Surface passivation"

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  • Advances in the surface passivation of silicon solar cells 
    Schmidt, Jan; Werner, Florian; Veith, Boris; Zielke, Dimitri; Steingrube, S.; Altermatt, Pietro P.; Gatz, Sebastian; Dullweber, Thorsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2012)
    The surface passivation properties of aluminium oxide (Al 2O 3) on crystalline Si are compared with the traditional passivation system of silicon nitride (SiN x). It is shown that Al 2O 3 has fundamental advantages over ...
  • Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells 
    Gatz, Sebastian; Bothe, Karsten; Müller, Jens; Dullweber, Thorsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)
    In this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance ...
  • Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells 
    Veith, Boris; Dullweber, Thorsten; Siebert, M.; Kranz, Christopher; Werner, Florian; Harder, Nils-Peter; Schmidt, Jan; Roos, B.F.P.; Dippell, T.; Brendel, Rolf (Amsterdam : Elsevier BV, 2012)
    The deposition rate of the standard (i.e. sequential) atomic layer deposition (ALD) process is very low compared to the plasma-enhanced chemical vapour deposition (PECVD) process. Therefore, as a short- and medium-term ...
  • Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon 
    Veith, Boris; Werner, Florian; Zielke, Dimitri; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)
    We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) ...
  • Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells 
    Gogolin, Ralf; Zielke, D.; Descoeudres, A.; Despeisse, M.; Ballif, C.; Schmidt, J. (London : Elsevier Ltd., 2017)
    In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. ...
  • Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers 
    Titova, V.; Veith-Wolf, B.; Startsev, D.; Schmidt, J. (London : Elsevier Ltd., 2017)
    We characterize the surface passivation properties of ultrathin titanium oxide (TiOx) films deposited by atomic layer deposition (ALD) on crystalline silicon by means of carrier lifetime measurements. We compare different ...
  • Fundamental consideration of junction formation strategies for phosphorus-doped emitters with J0e < 10 fA/cm2 
    Min, Byungsul; Krügener, Jan; Müller, Matthias; Bothe, Karsten; Brendel, Rolf (London : Elsevier Ltd., 2017)
    This work shows the potential of further optimization of phosphorus-doped emitters in p-type silicon solar cells. We investigate the impact of different combinations of phosphorus doping profiles and surface passivation ...
  • High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells 
    Werner, Florian; Stals, Walter; Görtzen, Roger; Veith, Boris; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)
    High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous ...
  • Improved parameterization of Auger recombination in silicon 
    Richter, A.; Werner, F.; Cuevas, A.; Schmidt, J.; Glunz, S.W. (London : Elsevier Ltd., 2012)
    Accurate modeling of the intrinsic recombination in silicon is important for device simulation as well as for interpreting measured effective carrier lifetime data. In this contribution we study the injection-dependent ...
  • Organic-silicon Solar Cells Exceeding 20% Efficiency 
    Zielke, Dimitri; Niehaves, Claudia; Lövenich, Wilfried; Elschner, Andreas; Hörteis, Matthias; Schmidt, Jan (Amsterdam : Elsevier, 2015)
    Aftera briefreview of therecent evolvement oforganic-silicon heterojunction solar cells,we present here our latest measurements of the saturation current densities (J0) and contact resistances (RC) of crystalline silicon ...
  • Solar cell emitter design with PV-tailored implantation 
    Ohrdes, Tobias; Steingrube, S.; Wagner, Hannes; Zechner, C.; Letay, G.; Chen, R.; Dunham, S.T.; Altermatt, Pietro P. (Amsterdam : Elsevier BV, 2011)
    A potentially cost-effective ion implanter for solar cells has become commercially available very recently. As the emitter dopant profiles differ from the standard diffusions, a combination of process simulation and device ...