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Browsing by Subject "Silicon wafers"

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Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells

Gatz, Sebastian; Bothe, Karsten; Müller, Jens; Dullweber, Thorsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)

In this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance ...
Assessing the stability of p+ and n+ polysilicon passivating contacts with various capping layers on p-type wafers

Madumelu, Chukwuka; Cai, Yalun; Hollemann, Christina; Peibst, Robby; Hoex, Bram; Hallam, Brett J.; Soeriyadi, Anastasia H. (Amsterdam [u.a.] : NH, Elsevier, 2023)

Polysilicon (poly-Si)-on-oxide passivating contact structures (POLO/TOPCon) enable high-efficiency solar cells as they simultaneously provide a very high level of surface passivation and a high conductance for either ...
Atomic-Layer-Deposited Al2O3 as Effective Barrier against the Diffusion of Hydrogen from SiNx:H Layers into Crystalline Silicon during Rapid Thermal Annealing

Helmich, Lailah; Walter, Dominic C.; Bredemeier, Dennis; Schmidt, Jan (Weinheim : Wiley-VCH, 2020)

Stacks of hydrogen-lean aluminum oxide, deposited via plasma-assisted atomic-layer-deposition, and hydrogen-rich plasma-enhanced chemical vapor-deposited silicon nitride (SiNx) are applied to boron-doped float-zone silicon ...
Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon

Veith, Boris; Werner, Florian; Zielke, Dimitri; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)

We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) ...
Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells

Gogolin, Ralf; Zielke, D.; Descoeudres, A.; Despeisse, M.; Ballif, C.; Schmidt, J. (London : Elsevier Ltd., 2017)

In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. ...
Determination of the Contact Resistivity of Screen-printed Al Contacts Formed by Laser Contact Opening

Kranz, Christopher; Lim, Bianca; Baumann, Ulrike; Dullweber, Thorsten (London : Elsevier Ltd., 2015)

Next-generation industrial PERC solar cells typically include local laser contact opening (LCO) of a dielectric passivation layer stack at the rear side and subsequent full-area aluminum screen printing and firing. In this ...
Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers

Titova, V.; Veith-Wolf, B.; Startsev, D.; Schmidt, J. (London : Elsevier Ltd., 2017)

We characterize the surface passivation properties of ultrathin titanium oxide (TiOx) films deposited by atomic layer deposition (ALD) on crystalline silicon by means of carrier lifetime measurements. We compare different ...
Experimental setup for camera-based measurements of electrically and optically stimulated luminescence of silicon solar cells and wafers

Hinken, David; Schinke, Carsten; Herlufsen, Sandra; Schmidt, Arne; Bothe, Karsten; Brendel, Rolf (College Park, MD : American Institute of Physics, 2011)

We report in detail on the luminescence imaging setup developed within the last years in our laboratory. In this setup, the luminescence emission of silicon solar cells or silicon wafers is analyzed quantitatively. Charge ...
Extraction of PEDOT:PSS/c-Si Junction Properties by Modeling of Injection-Dependent Lifetime Measurements Including Depletion Region Modulation

Halbich, Marc-Uwe; Schmidt, Jan (Weinheim : Wiley-VCH, 2021)

The carrier lifetime of n-type silicon wafers coated with the conducting polymer PEDOT:PSS as a function of the excess carrier concentration Δp within the wafer is characterized using the quasi-steady-state photoconductance ...
Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation

Mader, Christoph; Bock, Robert; Müller, Jens; Schmidt, Jan; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)

Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 ...
High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells

Werner, Florian; Stals, Walter; Görtzen, Roger; Veith, Boris; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)

High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous ...
Identifying the location of recombination from voltage-dependent quantum efficiency measurements

Min, Byungsul; Kruse, Christian; Schinke, Carsten; Wolf, Martin; Müller, Matthias; Sträter, Hendrik; Wagner, Matthias; Bothe, Karsten; Brendel, Rolf (London : Elsevier Ltd., 2017)

This paper investigates process-induced variations of the open-circuit voltage (Voc) using voltage-dependent quantum efficiency measurements. By means of device modelling we show that this method is able to explain the Voc ...
Kerfless exfoliated thin crystalline Si wafers with Al metallization layers for solar cells

Niepelt, Raphael; Hensen, Jan; Steckenreiter, Verena; Brendel, Rolf; Kajari-Schröder, Sarah (Cambridge : Cambridge University Press, 2015)

We report on a kerfless exfoliation approach to further reduce the costs of crystalline silicon photovoltaics making use of evaporated Al as a double functional layer. The Al serves as the stress inducing element to drive ...
Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

Steckenreiter, Verena; Walter, Dominic C.; Schmidt, Jan (Melville, NY : American Institute of Physics Inc., 2017)

Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related ...
Layer transfer from chemically etched 150 mm porous si substrates

Terheiden, Barbara; Hensen, Jan; Wolf, Andreas; Horbelt, Renate; Plagwitz, Heiko; Brendel, Rolf (Basel : MDPI AG, 2010)

We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface ...
Lifetime Analysis for Defect Characterization in Kerfless Epitaxial Silicon from the Porous Silicon Process

Gemmel, Catherin; Hensen, Jan; Kajari-Schröder, Sarah; Brendel, Rolf (London : Elsevier Ltd., 2016)

Kerfless epitaxial silicon from the porous silicon (PSI) process is a promising alternative for standard wafers. They allow the reduction of PV costs by combining high material quality at reduced production costs. We ...
Organic-silicon Solar Cells Exceeding 20% Efficiency

Zielke, Dimitri; Niehaves, Claudia; Lövenich, Wilfried; Elschner, Andreas; Hörteis, Matthias; Schmidt, Jan (Amsterdam : Elsevier, 2015)

Aftera briefreview of therecent evolvement oforganic-silicon heterojunction solar cells,we present here our latest measurements of the saturation current densities (J0) and contact resistances (RC) of crystalline silicon ...
Simulation of Spalling with a Non-planar Bi-layered Interface Due to the Reuse of the Substrate

Berardone, Irene; Hensen, Jan; Steckenreiter, Verena; Kajari-Schröder, Sarah; Paggi, Marco (London : Elsevier Ltd., 2016)

Kerfless wafering techniques have the potential to reduce the cost of crystalline silicon (Si) in photovoltaics by saving material and production costs. Thermomechanical spallation from thick wafers with aluminium (Al) in ...
Solar cell emitter design with PV-tailored implantation

Ohrdes, Tobias; Steingrube, S.; Wagner, Hannes; Zechner, C.; Letay, G.; Chen, R.; Dunham, S.T.; Altermatt, Pietro P. (Amsterdam : Elsevier BV, 2011)

A potentially cost-effective ion implanter for solar cells has become commercially available very recently. As the emitter dopant profiles differ from the standard diffusions, a combination of process simulation and device ...
Terahertz detectors based on graphene

Gouider, Fathi; Salman, Majdi; Göthlich, Markus; Schmidt, Hennrik; Ahlers, Franz-J.; Haug, Rolf J.; Nachtwei, Georg (Bristol : Institute of Physics Publishing, 2013)

In this study we present magnetotransport an magnetooptical data obtained in the magnetic field range 0T < B < 7T at detectors patterned in Corbino geometry on epitaxial graphene wafer using a Ge detector. We observed ...

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