Browsing by Subject "Silicon nitride"

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  • Schmidt, Jan; Werner, Florian; Veith, Boris; Zielke, Dimitri; Steingrube, S.; Altermatt, Pietro P.; Gatz, Sebastian; Dullweber, Thorsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2012)
    The surface passivation properties of aluminium oxide (Al 2O 3) on crystalline Si are compared with the traditional passivation system of silicon nitride (SiN x). It is shown that Al 2O 3 has fundamental advantages over ...
  • Veith, Boris; Werner, Florian; Zielke, Dimitri; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)
    We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) ...
  • Mader, Christoph; Bock, Robert; Müller, Jens; Schmidt, Jan; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)
    Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 ...
  • Heinemeyer, Frank; Steckenreiter, Verena; Kiefer, Fabian; Peibst, Robby (London : Elsevier Ltd., 2015)
    We investigate a hierarchical surface structuring process to reduce the optical reflectance of monocrystalline Si solar cells to below the reflectance of state-of-the-art alkaline texturing. First, alkaline texturing is ...
  • Friedrich, Daniel; Kaufer, Henning; Westphal, Tobias; Yamamoto, K.; Sawadsky, Andreas; Ya Khalili, F.; Danilishin, S.L.; Goßler, Stefan; Danzmann, Karsten; Schnabel, Roman (Bristol : IOP Publishing Ltd., 2011)
    The sensitivity of laser interferometers can be pushed into regimes that enable the direct observation of the quantum behaviour of mechanical oscillators. In the past, membranes with subwavelength thickness (thin films) ...
  • Haase, Felix; Rojas, Enrique Garralaga; Bothe, Karsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)
    High efficiency solar cells require high generation and low recombination rates. High bulk lifetime, well passivated surfaces, and lowly doped thin emitters allow for low recombination rates. Thin passivated emitters should ...
  • Vogt, Malte R.; Holst, Hendrik; Winter, Matthias; Brendel, Rolf; Altermatt, Pietro P. (Amsterdam : Elsevier, 2015)
    Commonly, the thermal behavior of solar cell modules is calculated with analytical approaches using non wavelength-dependent optical data. Here, we employ ray tracing of entire solar modules at wavelengths of 300-2500 nm ...
  • Murphy, J.D.; Al-Amin, M.; Bothe, K.; Olmo, M.; Voronkov, V.V.; Falster, R.J. (College Park, MD : American Institute of Physics, 2015)
    Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related extended defects give rise to ...