Browsing by Subject "Silicon carbide"

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  • Baringhaus, Jens; Settnes, Mikkel; Aprojanz, Johannes; Power, Stephen R.; Jauho, Antti-Pekka; Tegenkamp, Christoph (College Park, MD : American Physical Society, 2016)
    We realize nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference ...
  • Langer, T.; Pfnür, Herbert; Schumacher, H.W.; Tegenkamp, Christoph (College Park, MD : American Institute of Physics, 2009)
    Electron energy loss spectroscopy (EELS) is used to study the transition from the buffer layer to the first graphene layers during graphitization of SiC(0001). Graphene growth is controlled and correlated with spot profile ...
  • Denkena, B.; Krödel, A.; Gartzke, T. (Amsterdam [u.a.] : Elsevier, 2020)
    In production environment, grinding is often the last step along the process chain. At this step, the main share of the value chain is already manufactured. Correspondingly, the process result of this step directly influences ...
  • Langer, Thomas; Förster, D.F.; Busse, C.; Michely, T.; Pfnür, Herbert; Tegenkamp, Christoph (Bristol : IOP Publishing Ltd., 2011)
    The sheet plasmon of graphene on Ir(111) was investigated in this paper by means of high-resolution electron energy loss spectroscopy. The perfect lateral coordination of sp2-hybridized C atoms on a large scale is manifested ...
  • Edler, Frederik; Miccoli, Ilio; Pfnür, Herbert; Tegenkamp, Christoph (Bristol : Institute of Physics Publishing, 2019)
    Electronic properties of low dimensional structures on surfaces can be comprehensively explored by surface transport experiments. However, the surface sensitivity of this technique to atomic structures comes along with the ...