Browsing by Subject "Semiconductor doping"

Browsing by Subject "Semiconductor doping"

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  • Döhrmann, S.; Hägele, D.; Rudolph, J.; Bichler, M.; Schuh, D.; Oestreich, Michael (College Park, MD : American Physical Society, 2004)
    The anisotropic spin dephasing in (110) quantum wells (QW) from 6 K up to room temperature was investigated. It was found that intersubband scattering constitutes a new spin dephasing mechanism that is necessary to explain ...
  • Alam, Umair; Khan, Azam; Ali, Danish; Bahnemann, Detlef W.; Muneer, M. (Cambridge : Royal Society of Chemistry, 2018)
    Rare earth metal doping into semiconductor oxides is considered to be an effective approach to enhance photocatalytic activity due to its ability to retard the electron-hole pair recombination upon excitation. Herein, we ...
  • Shirakawa, T.; Nishimoto, S.; Ohta, Y.; Fukuyama, H. (Bristol : IOP Publishing Ltd., 2009)
    Finite-size systems of the one-dimensional attractive Hubbard model with random potential are studied as an effective model for doped semiconductor nanotubes. We calculate the binding energy of Cooper pairs and pair ...
  • Kamata, N.; Klausing, H.; Fedler, F.; Mistele, D.; Aderhold, J.; Semchinova, O.K.; Graul, J.; Someya, T.; Arakawa, Y. (Cambridge : Cambridge University Press, 2004)
    In order to improve the crystal quality of GaN-based light emitting devices, photoluminescence (PL) characterization of below-gap states in plasma assisted MBE-grown GaN/AlGaN quantum well (QW) structures has been done by ...
  • Terheiden, Barbara; Hensen, Jan; Wolf, Andreas; Horbelt, Renate; Plagwitz, Heiko; Brendel, Rolf (Basel : MDPI AG, 2010)
    We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface ...
  • Schmidt, H.; Smirnov, D.; Rode, J.; Haug, Rolf J. (College Park, MD : American Institute of Physics, 2013)
    An Atomic Force Microscope is used to alter one part of a single layer graphene sample locally. Transport experiments at low temperatures are then used to characterize the different parts independently with field effect ...
  • Reiter, Sina; Koper, Nico; Reineke-Koch, Rolf; Larionova, Yevgeniya; Turcu, Mircea; Krügener, Jan; Tetzlaff, Dominic; Wietler, Tobias; Höhne, Uwe; Kähler, Jan-Dirk; Brendel, Rolf; Peibst, Robby (London : Elsevier Ltd., 2016)
    We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle ...
  • Della Valle, Giuseppe; Osellame, Roberto; Galzerano, Gianluca; Chiodo, Nicola; Cerullo, Giulio; Laporta, Paolo; Svelto, Orazio; Morgner, Uwe; Rozhin, A.G.; Scardaci, V.; Ferrari, A.C. (American Institute of Physics Inc., 2006)
    The authors report on the first demonstration of mode locking in an active waveguide laser manufactured by femtosecond laser writing. The active waveguide is fabricated in an Er-Yb-doped phosphate glass, and the mode locker ...