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Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

Agafonov, Oleksiy B.; Dais, Christian; Grützmacher, Detlev; Haug, Rolf J. (College Park, MD : American Institute of Physics, 2010)

Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a ...
Spin-orbit coupling and anisotropy of spin splitting in quantum dots

Könemann, J.; Haug, Rolf J.; Maude, D.K.; Fal'Ko, V.I.; Altshuler, B.L. (College Park, MD : American Physical Society, 2005)

In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin-orbit coupling is equivalent to an effective magnetic field ±BSO which has the opposite sign for sz=±1/2 spin electrons. When the ...
Spinaufgelöste Tunnelspektroskopie von Halbleiterheterostrukturen : Zeeman-Effekt und Phasenrelaxation

König, Peter Richard (Hannover : Universität, 2000)

[no abstract]
Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

Hapke-Wurst, I.; Zeitler, U.; Keyser, U.F.; Haug, Rolf J.; Pierz, Klaus; Ma, Z. (College Park, MD : American Institute of Physics, 2003)

A study was conducted on the onset voltage of resonant tunneling through indium arsenide (InAs) quantum dots by growth parameters. It was found that the onset voltage of the first step decreased from 200 mV to 0 with ...

Now showing items 1-4 of 4

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Browsing by Subject "Resonant tunneling"

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