Browsing by Subject "Recombination activity"

Browsing by Subject "Recombination activity"

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  • Murphy, J.D.; McGuire, R.E.; Bothe, K.; Voronkov, V.V.; Falster, R.J. (London : Elsevier Ltd., 2014)
    Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point. Oxide precipitates therefore can form during ingot cooling and ...
  • Murphy, J.D.; Al-Amin, M.; Bothe, K.; Olmo, M.; Voronkov, V.V.; Falster, R.J. (College Park, MD : American Institute of Physics, 2015)
    Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related extended defects give rise to ...