Auflistung nach Schlagwort "Photoluminescence"

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  • Anomalous spin dephasing in (110) GaAs quantum wells: Anisotropy and intersubband effects 
    Döhrmann, S.; Hägele, D.; Rudolph, J.; Bichler, M.; Schuh, D.; Oestreich, Michael (College Park, MD : American Physical Society, 2004)
    The anisotropic spin dephasing in (110) quantum wells (QW) from 6 K up to room temperature was investigated. It was found that intersubband scattering constitutes a new spin dephasing mechanism that is necessary to explain ...
  • Dynamic photoluminescence lifetime imaging for injectiondependent lifetime measurements 
    Herlufsen, Sandra; Bothe, Karsten; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier, 2014)
    We investigate the impact of an injection-dependent carrier lifetime in crystalline silicon on dynamic photoluminescence lifetime imaging (dynamic PLI). Although the dynamic lifetime approach is a technique that evaluates ...
  • Evaluating the quality of selective emitter structures by imaging the emitter saturation current density 
    Müller, M.; Altermatt, Pietro P.; Schlegel, K.; Fischer, G. (Amsterdam : Elsevier BV, 2012)
    A method to derive the emitter saturation current density J0e with lateral resolution is applied to investigate selective emitter structures. The method uses PL lifetime imaging at several injection densities to laterally ...
  • Magneto-photoluminescence spectroscopy of single InAs/AlAs quantum dots 
    Sarkar, D.; Van Der Meulen, H.P.; Calleja, J.M.; Meyer, J.M.; Haug, Rolf J.; Pierz, K. (Bristol : IOP Publishing Ltd., 2010)
    We present non-resonant, polarization-resolved magneto-photoluminescence measurements up to 12 T on single InAs/AlAs quantum dots. We observe typical g-factors between 1 and 2, very low diamagnetic shifts due to strong ...
  • Modeling of photoluminescence in laser-based lighting systems 
    Chatzizyrli, Elisavet; Tinne, Nadine; Lachmayer, Roland; Neumann, Jörg; Kracht, Dietmar (Bellingham, Wash. : SPIE, 2017)
    The development of laser-based lighting systems has been the latest step towards a revolution in illumination technology brought about by solid-state lighting. Laser-activated remote phosphor systems produce white light ...
  • Phonon excitations of composite-fermion Landau levels 
    Schulze-Wischeler, F.; Hohls, Frank; Zeitler, U.; Reuter, D.; Wieck, A.D.; Haug, Rolf J. (College Park, MD : American Physical Society, 2004)
    The phonon excitations of fractional quantum Hall (FQH) states at filling factors ν =1÷3,2÷5, 4÷7, 3÷5, 4÷3, and 5÷3 were investigated. The excitations were found to be based on Landau-level transitions of composite fermions ...
  • Photoneutralization of charges in GaAs quantum dot based entangled photon emitters 
    Yang, Jingzhong; Fandrich, Tom; Benthin, Frederik; Keil, Robert; Sharma, Nand Lal; Nie, Weijie; Hopfmann, Caspar; Schmidt, Oliver G.; Zopf, Michael; Ding, Fei (College Park, MD : American Physical Society, 2022-03-03)
    Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton ...
  • Piezoelectric screening in single InAs/AlAs quantum dots 
    Sarkar, D.; Van Der Meulen, H.P.; Calleja, J.M.; Meyer, J.M.; Haug, Rolf J.; Pierz, Klaus (College Park, MD : American Institute of Physics, 2009)
    Micro-photoluminescence spectroscopy for varying temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. A broad sideband at 1.2 meV of the zero phonon line is attributed ...
  • Thermodynamic origin of the slow free exciton photoluminescence rise in GaAs 
    Beck, Michael; Hübner, Jens; Oestreich, Michael; Bieker, S.; Henn, T.; Kiessling, T.; Ossau, W.; Molenkamp, L.W. (College Park, MD : American Physical Society, 2016)
    We use time-resolved photoluminescence (TRPL) spectroscopy to unequivocally clarify the microscopic origin of the nanosecond free exciton photoluminescence rise in GaAs at low temperatures. In crucial distinction from ...
  • Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters 
    Hapke-Wurst, I.; Zeitler, U.; Keyser, U.F.; Haug, Rolf J.; Pierz, Klaus; Ma, Z. (College Park, MD : American Institute of Physics, 2003)
    A study was conducted on the onset voltage of resonant tunneling through indium arsenide (InAs) quantum dots by growth parameters. It was found that the onset voltage of the first step decreased from 200 mV to 0 with ...