Experiments have been conducted to understand the behaviour of iron in silicon containing oxide precipitates and associated defects (dislocations and stacking faults), which is subjected to phosphorus diffusion gettering. ...

This work shows the potential of further optimization of phosphorus-doped emitters in p-type silicon solar cells. We investigate the impact of different combinations of phosphorus doping profiles and surface passivation ...

Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point. Oxide precipitates therefore can form during ingot cooling and ...

A potentially cost-effective ion implanter for solar cells has become commercially available very recently. As the emitter dopant profiles differ from the standard diffusions, a combination of process simulation and device ...