Browsing by Subject "P-type silicon wafers"

Now showing items 1-2 of 2

Extraction of PEDOT:PSS/c-Si Junction Properties by Modeling of Injection-Dependent Lifetime Measurements Including Depletion Region Modulation

Halbich, Marc-Uwe; Schmidt, Jan (Weinheim : Wiley-VCH, 2021)

The carrier lifetime of n-type silicon wafers coated with the conducting polymer PEDOT:PSS as a function of the excess carrier concentration Δp within the wafer is characterized using the quasi-steady-state photoconductance ...
Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation

Mader, Christoph; Bock, Robert; Müller, Jens; Schmidt, Jan; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)

Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 ...

Now showing items 1-2 of 2

Browse