Experiments have been conducted to understand the behaviour of iron in silicon containing oxide precipitates and associated defects (dislocations and stacking faults), which is subjected to phosphorus diffusion gettering. ...

Kerfless epitaxial silicon from the porous silicon (PSI) process is a promising alternative for standard wafers. They allow the reduction of PV costs by combining high material quality at reduced production costs. We ...

Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related extended defects give rise to ...