Browsing by Subject "Layer transfer"

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  • High-quality exfoliated crystalline silicon foils for solar cell applications 
    Niepelt, Raphael; Hensen, Jan; Knorr, Alwina; Steckenreiter, Verena; Kajari-Schröder, Sarah; Brendel, Rolf (Amsterdam : Elsevier, 2014)
    Kerfless wafering techniques offer a significant cost saving potential via the reduction of silicon consumption. In this paper, we examine thin single crystalline Si foils that were fabricated by a novel kerfless ...
  • Lift-off of free-standing layers in the kerfless porous silicon process 
    Kajari-Schröder, Sarah; Käsewieter, Jörg; Hensen, Jan; Brendel, Rolf (Amsterdam : Elsevier, 2013)
    We discuss the lift-off of free-standing epitaxially grown silicon layers from the porous silicon (PSI) process, which is a kerfless wafering technology. The lift-off is a crucial step in the PSI cycle. A high-porosity ...
  • Multilayer etching for kerf-free solar cells from macroporous silicon 
    Schäfer, Sören; Ernst, Marco; Kajari-Schröder, Sarah; Brendel, Rolf (Amsterdam : Elsevier, 2013)
    Kerf-free techniques for subdividing a single thick crystalline Si wafer into a multitude of thin Si layers have a large potential for cost reductions. In this paper, we explore pore formation in Si for separating many 18 ...
  • Thermomechanical Spalling of Epitaxially Grown Silicon from Porosified Substrates 
    Steckenreiter, Verena; Hensen, Jan; Knorr, Alwina; Niepelt, Raphael; Brendel, Rolf; Kajari-Schröder, Sarah (London : Elsevier Ltd., 2016)
    We combine two kerfless approaches to unite advantages of both processes: the epitaxial layer transfer based on porous silicon (PSI process) and the lift-off of a thin silicon layer from a substrate via controlled spalling ...
  • Thin crystalline macroporous silicon solar cells with ion implanted emitter 
    Ernst, Marco; Schulte-Huxel, Henning; Niepelt, Raphael; Kajari-Schröder, Sarah; Brendel, Rolf (Amsterdam : Elsevier, 2013)
    We separate a (34 ± 2) μm-thick macroporous Si layer from an n-type Si wafer by means of electrochemical etching. The porosity is p = (26.2 ± 2.4)%. We use ion implantation to selectively dope the outer surfaces of the ...