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Creation of silicon vacancy color centers with a narrow emission line in nanodiamonds by ion implantation

Takashima, Hideaki; Fukuda, Atsushi; Shimazaki, Konosuke; Iwabata, Yusuke; Kawaguchi, Hiroki; Schell, Andreas W.; Tashima, Toshiyuki; Abe, Hiroshi; Onoda, Shinobu; Ohshima, Takeshi; Takeuchi, Shigeki (Washington, DC : Optica, 2021)

Nanodiamonds containing silicon-vacancy (SiV) centers with high brightness, high photo-stability, and a narrow zero phonon line (ZPL) have attracted attention for bioimaging, nanoscale thermometry, and quantum technologies. ...
Ion implantation of 226Ra for a primary 222Rn emanation standard

Mertes, Florian; Kneip, Nina; Heinke, Reinhard; Kieck, Tom; Studer, Dominik; Weber, Felix; Röttger, Stefan; Röttger, Annette; Wendt, Klaus; Walther, Clemens (Amsterdam [u.a.] : Elsevier Science, 2022)

Laser resonance ionization at the RISIKO 30 kV mass separator has been used to produce isotopically and isobarically pure and well quantified 222Rn emanation standards. Based upon laser-spectroscopic preparation studies, ...
Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties

Joseph, A.; Lilienkamp, G.; Wietler, T.F.; Osten, H.J. (Berlin [u.a.] : Springer, 2020)

The effects of nitrogen incorporation by high-dose ion implantation in epitaxial gadolinium oxide (Gd2O3) films on Si (111) followed by annealing have been investigated. The nitrogen content in the oxide layer was changed ...
Ion-implanted PERC solar cells with Al2O3/SiN x rear passivation

Dullweber, Thorsten; Hesse, Rene; Bhosle, Vikram; Dubé, Chris (London : Elsevier Ltd., 2013)

Ion implantation is an attractive candidate for PERC solar cells due to the single-sided emitter phosphorus doping. The oxide, which is formed during the implant anneal, can be used as rear passivation of PERC cells. ...
Nanocrystalline versus microcrystalline Lo2O:B2O 3 composites: Anomalous ionic conductivities and percolation theory

Indris, Sylvio; Heitjans, Paul; Roman, H. Eduardo; Bunde, Armin (College Park, ML : American Physical Society, 2000)

We study ionic transport in nano- and microcrystalline (1−x)Li2O:xB2O3 composites using standard impedance spectroscopy. In the nanocrystalline samples (average grain size of about 20 nm), the ionic conductivity σdc increases ...
Nanocrystals for nanodot memories : ion beam synthesis and electrical studies

Beyer, Volkhard (Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2012)

[no abstract]
Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon on Oxide Junctions for Both Polarities

Rienäcker, Michael; Merkle, Agnes; Römer, Udo; Kohlenberg, Heike; Krügener, Jan; Brendel, Rolf; Peibst, Robby (London : Elsevier Ltd., 2016)

We report on ion-implanted, inkjet patterned back junction back contact silicon solar cells with POLysilicon on Oxide (POLO) junctions for both polarities – n+ doped BSF and p+ doped emitter. The recombination behavior is ...
Thin crystalline macroporous silicon solar cells with ion implanted emitter

Ernst, Marco; Schulte-Huxel, Henning; Niepelt, Raphael; Kajari-Schröder, Sarah; Brendel, Rolf (Amsterdam : Elsevier, 2013)

We separate a (34 ± 2) μm-thick macroporous Si layer from an n-type Si wafer by means of electrochemical etching. The porosity is p = (26.2 ± 2.4)%. We use ion implantation to selectively dope the outer surfaces of the ...

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