Browsing by Subject "III-V semiconductors"

Browsing by Subject "III-V semiconductors"

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  • Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AIGaN quantum well 
    Kamata, N.; Klausing, H.; Fedler, F.; Mistele, D.; Aderhold, J.; Semchinova, O.K.; Graul, J.; Someya, T.; Arakawa, Y. (Cambridge : Cambridge University Press, 2004)
    In order to improve the crystal quality of GaN-based light emitting devices, photoluminescence (PL) characterization of below-gap states in plasma assisted MBE-grown GaN/AlGaN quantum well (QW) structures has been done by ...
  • Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation 
    Mahmudlu, Hatam; Johanning, Robert; van Rees, Albert; Khodadad Kashi, Anahita; Epping, Jörn P.; Haldar, Raktim; Boller, Klaus-J.; Kues, Michael (London [u.a.] : Nature Publ. Group, 2023)
    Integrated photonics has recently become a leading platform for the realization and processing of optical entangled quantum states in compact, robust and scalable chip formats, with applications in long-distance quantum-secured ...
  • Local droplet etching on InAlAs/InP surfaces with InAl droplets 
    Cao, Xin; Zhang, Yiteng; Ma, Chenxi; Wang, Yinan; Brechtken, Benedikt; Haug, Rolf J.; Rugeramigabo, Eddy P.; Zopf, Michael; Ding, Fei (New York, NY : American Inst. of Physics, 2022)
    GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of ...
  • Non-equilibrium spin noise spectroscopy of a single quantum dot operating at fiber telecommunication wavelengths 
    Sun, Tian-Jiao; Sterin, P.; Lengert, L.; Nawrath, C.; Jetter, M.; Michler, P.; Ji, Yang; Hübner, J.; Oestreich, M. (Melville, NY : American Inst. of Physics, 2022)
    We report on the spin and occupation noise of a single, positively charged (InGa)As quantum dot emitting photons in the telecommunication C-band. The spin noise spectroscopy measurements are carried out at a temperature ...
  • Piezoelectric screening in single InAs/AlAs quantum dots 
    Sarkar, D.; Van Der Meulen, H.P.; Calleja, J.M.; Meyer, J.M.; Haug, Rolf J.; Pierz, Klaus (College Park, MD : American Institute of Physics, 2009)
    Micro-photoluminescence spectroscopy for varying temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. A broad sideband at 1.2 meV of the zero phonon line is attributed ...
  • Pulsed laser micro ablation of polycrystalline cubic boron nitride 
    Denkena, Berend; Krödel, Alexander; Heckemeyer, Arnd; Murrenhoff, Marita (Amsterdam : Elsevier B.V., 2020)
    Polycrystalline cubic boron nitride (PcBN) is the second hardest material after diamond. Because of its unique properties, PcBN is extensively used as a cutting tool material for the machining of hardened steels. Pulsed ...
  • Results of the round robin calibration of reference solar cells within the PhotoClass project 
    Kröger, Ingo; Friedrich, Dirk; Winter, Stefan; Salis, Elena; Müllejans, Harald; Pavanello, Diego; Hohl-Ebinger, Jochen; Bothe, Karsten; Hinken, David; Dittmann, Sebastian; Friesen, Gabi; Bliss, Martin; Betts, Tom; Gottschalg, Ralph; Rimmelspacher, Lorentz; Stang, Johannes; Herrmann, Werner; Dubard, Jimmy (Les Ulis : EDP Sciences, 2018)
    An intercomparison of terrestrial photovoltaic (PV) calibrations was performed among a number of European calibration and testing laboratories that participated in the European Metrology Research Program (EMRP) project ...
  • Temperature-dependent broadening of coherent current peaks in InAs double quantum dots 
    Dani, Olfa; Hussein, Robert; Bayer, Johannes C.; Kohler, Sigmund; Haug, Rolf J. (London : Springer Nature, 2022)
    Quantum systems as used for quantum computation or quantum sensing are nowadays often realized in solid state devices as e.g. complex Josephson circuits or coupled quantum-dot systems. Condensed matter as an environment ...
  • Thickness uniformity measurements and damage threshold tests of large-area GaAs/AlGaAs crystalline coatings for precision interferometry 
    Koch, P.; Cole, G.D.; Deutsch, C.; Follman, D.; Heu, P.; Kinley-Hanlon, M.; Kirchhoff, R.; Leavey, S.; Lehmann, J.; Oppermann, P.; Rai, A.K.; Tornasi, Z.; Wöhler, J.; Wu, D.S.; Zederbauer, T.; Lück, H. (Washington, DC : OSA - The Optical Society, 2019)
    Precision interferometry is the leading method for extremely sensitive measurements in gravitational wave astronomy. Thermal noise of dielectric coatings poses a limitation to the sensitivity of these interferometers. To ...