Browsing by Subject "Electron energy levels"

Browsing by Subject "Electron energy levels"

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  • Graphitization process of SiC(0001) studied by electron energy loss spectroscopy 
    Langer, T.; Pfnür, Herbert; Schumacher, H.W.; Tegenkamp, Christoph (College Park, MD : American Institute of Physics, 2009)
    Electron energy loss spectroscopy (EELS) is used to study the transition from the buffer layer to the first graphene layers during graphitization of SiC(0001). Graphene growth is controlled and correlated with spot profile ...
  • Spin-orbit coupling and anisotropy of spin splitting in quantum dots 
    Könemann, J.; Haug, Rolf J.; Maude, D.K.; Fal'Ko, V.I.; Altshuler, B.L. (College Park, MD : American Physical Society, 2005)
    In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin-orbit coupling is equivalent to an effective magnetic field ±BSO which has the opposite sign for sz=±1/2 spin electrons. When the ...
  • Three-beam atom interferometer 
    Hinderthür, H.; Pautz, A.; Rieger, V.; Ruschewitz, F.; Peng, J.L.; Sengstock, K.; Ertmer, Wolfgang (American Physical Society, 1997)
    We present an atom interferometer based on the interference of three partial matter waves in three different internal and external states. Coherent laser excitation acts as a beamsplitter to create a superposition state ...
  • Tunable graphene system with two decoupled monolayers 
    Schmidt, H.; Lüdtke, T.; Barthold, P.; McCann, E.; Fal'Ko, V.I.; Haug, Rolf J. (College Park, MD : American Institute of Physics, 2008)
    The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, ...