Auflistung nach Schlagwort "Electrically actives"

Anzeige der Dokumente 1-2 von 2

Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation

Roy Chaudhuri, A.; Fissel, Andreas; Osten, Hans Jörg (Cambridge : Cambridge University Press, 2017)

Epitaxial layers of insulating binary lanthanide oxides have been considered as potential alternative to conventional SiO2 for gate dielectric application in future Si-based MOSFET devices, which was investigated in more ...
Fundamental consideration of junction formation strategies for phosphorus-doped emitters with J0e < 10 fA/cm2

Min, Byungsul; Krügener, Jan; Müller, Matthias; Bothe, Karsten; Brendel, Rolf (London : Elsevier Ltd., 2017)

This work shows the potential of further optimization of phosphorus-doped emitters in p-type silicon solar cells. We investigate the impact of different combinations of phosphorus doping profiles and surface passivation ...

Anzeige der Dokumente 1-2 von 2

Durchblättern