Browsing by Subject "Czochralski silicon"

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  • Lifetime degradation mechanism in boron-doped Czochralski silicon 
    Voronkov, Vladimir V.; Falster, Robert; Batunina, A.V.; MacDonald, D.; Bothe, Karsten; Schmidt, J. (London : Elsevier Ltd., 2011)
    The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, ...
  • The effect of oxide precipitates on minority carrier lifetime in n-type silicon 
    Murphy, J.D.; Al-Amin, M.; Bothe, K.; Olmo, M.; Voronkov, V.V.; Falster, R.J. (College Park, MD : American Institute of Physics, 2015)
    Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related extended defects give rise to ...
  • Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon 
    Steckenreiter, V.; Walter, D.C.; Schmidt, J. (London : Elsevier Ltd., 2017)
    We analyze the lifetime evolution during permanent deactivation of the boron-oxygen-related defect center (BO defect) in boron-doped, oxygen-rich Czochralski-grown silicon (Cz-Si). In particular, we examine the impact of ...