Browsing by Subject "Crystalline silicons"

Browsing by Subject "Crystalline silicons"

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  • Schnabel, Roman; Britzger, M.; Brückner, F.; Burmeister, O.; Danzmann, Karsten; Dück, J.; Eberle, Tobias; Friedrich, Daniel; Lück, Harald; Mehmet, Moritz; Nawrodt, Ronny; Steinlechner, S.; Willke, Benno (Bristol : IOP Publishing Ltd., 2010)
    Current interferometric gravitational wave detectors use the combination of quasi-monochromatic, continuous-wave laser light at 1064 nm and fused silica test masses at room temperature. Detectors of the third generation, ...
  • Gogolin, Ralf; Zielke, D.; Descoeudres, A.; Despeisse, M.; Ballif, C.; Schmidt, J. (London : Elsevier Ltd., 2017)
    In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. ...
  • Schinke, Carsten; Peest, Peter Christian; Bothe, Karsten; Schmidt, Jan; Brendel, Rolf; Vogt, Malte R.; Kröger, Ingo; Winter, Stefan; Schirmacher, Alfred; Lim, Siew; Nguyen, Hieu T.; MacDonald, Daniel (Amsterdam : Elsevier, 2015)
    Based on a combined analysis of spectroscopic ellipsometry, reflectance and transmittance measurements as well as spectrally resolved luminescence measurements and spectral responsivity measurements, we present data of the ...
  • Niepelt, Raphael; Hensen, Jan; Steckenreiter, Verena; Brendel, Rolf; Kajari-Schröder, Sarah (Cambridge : Cambridge University Press, 2015)
    We report on a kerfless exfoliation approach to further reduce the costs of crystalline silicon photovoltaics making use of evaporated Al as a double functional layer. The Al serves as the stress inducing element to drive ...
  • Steckenreiter, Verena; Walter, Dominic C.; Schmidt, Jan (Melville, NY : American Institute of Physics Inc., 2017)
    Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related ...
  • Reiter, Sina; Koper, Nico; Reineke-Koch, Rolf; Larionova, Yevgeniya; Turcu, Mircea; Krügener, Jan; Tetzlaff, Dominic; Wietler, Tobias; Höhne, Uwe; Kähler, Jan-Dirk; Brendel, Rolf; Peibst, Robby (London : Elsevier Ltd., 2016)
    We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle ...
  • Kröger, Ingo; Friedrich, Dirk; Winter, Stefan; Salis, Elena; Müllejans, Harald; Pavanello, Diego; Hohl-Ebinger, Jochen; Bothe, Karsten; Hinken, David; Dittmann, Sebastian; Friesen, Gabi; Bliss, Martin; Betts, Tom; Gottschalg, Ralph; Rimmelspacher, Lorentz; Stang, Johannes; Herrmann, Werner; Dubard, Jimmy (Les Ulis : EDP Sciences, 2018)
    An intercomparison of terrestrial photovoltaic (PV) calibrations was performed among a number of European calibration and testing laboratories that participated in the European Metrology Research Program (EMRP) project ...
  • Berardone, Irene; Hensen, Jan; Steckenreiter, Verena; Kajari-Schröder, Sarah; Paggi, Marco (London : Elsevier Ltd., 2016)
    Kerfless wafering techniques have the potential to reduce the cost of crystalline silicon (Si) in photovoltaics by saving material and production costs. Thermomechanical spallation from thick wafers with aluminium (Al) in ...
  • Steckenreiter, V.; Walter, D.C.; Schmidt, J. (London : Elsevier Ltd., 2017)
    We analyze the lifetime evolution during permanent deactivation of the boron-oxygen-related defect center (BO defect) in boron-doped, oxygen-rich Czochralski-grown silicon (Cz-Si). In particular, we examine the impact of ...
  • Schinke, Carsten; Bothe, Karsten; Peest, Peter Christian; Schmidt, Jan; Brendel, Rolf (College Park, MD : American Institute of Physics, 2014)
    We present data of the coefficient of band-to-band absorption of crystalline silicon at 295 K in the wavelength range from 950 to 1350 nm and analyze its uncertainty. The data is obtained from measurements of reflectance ...