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Browsing by Subject "Carrier lifetime measurements"

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Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers

Titova, V.; Veith-Wolf, B.; Startsev, D.; Schmidt, J. (London : Elsevier Ltd., 2017)

We characterize the surface passivation properties of ultrathin titanium oxide (TiOx) films deposited by atomic layer deposition (ALD) on crystalline silicon by means of carrier lifetime measurements. We compare different ...
Implementation of full-area-deposited electron-selective TiOx layers into silicon solar cells

Titova, Valeriya; Schmidt, Jan (College Park, MD : American Institute of Physics, 2018)

We examine two different silicon solar cell designs featuring full-area electron-selective contacts based on ultrathin (2-3 nm) titanium oxide (TiOx) films deposited by atomic layer deposition. The first cell design applies ...
Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

Steckenreiter, Verena; Walter, Dominic C.; Schmidt, Jan (Melville, NY : American Institute of Physics Inc., 2017)

Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related ...
Organic-silicon Solar Cells Exceeding 20% Efficiency

Zielke, Dimitri; Niehaves, Claudia; Lövenich, Wilfried; Elschner, Andreas; Hörteis, Matthias; Schmidt, Jan (Amsterdam : Elsevier, 2015)

Aftera briefreview of therecent evolvement oforganic-silicon heterojunction solar cells,we present here our latest measurements of the saturation current densities (J0) and contact resistances (RC) of crystalline silicon ...

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Browsing by Subject "Carrier lifetime measurements"

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