Schmidt, H.; Lüdtke, T.; Barthold, P.; McCann, E.; Fal'Ko, V.I.; Haug, Rolf J.
(College Park, MD : American Institute of Physics, 2008)
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, ...