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Atomic layer deposition of aluminum oxide on crystalline silicon : fundamental interface properties and application to solar cells

Werner, Florian (Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2014)

[no abstract]
Atomic-Layer-Deposited Al2O3 as Effective Barrier against the Diffusion of Hydrogen from SiNx:H Layers into Crystalline Silicon during Rapid Thermal Annealing

Helmich, Lailah; Walter, Dominic C.; Bredemeier, Dennis; Schmidt, Jan (Weinheim : Wiley-VCH, 2020)

Stacks of hydrogen-lean aluminum oxide, deposited via plasma-assisted atomic-layer-deposition, and hydrogen-rich plasma-enhanced chemical vapor-deposited silicon nitride (SiNx) are applied to boron-doped float-zone silicon ...
Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells

Veith, Boris; Dullweber, Thorsten; Siebert, M.; Kranz, Christopher; Werner, Florian; Harder, Nils-Peter; Schmidt, Jan; Roos, B.F.P.; Dippell, T.; Brendel, Rolf (Amsterdam : Elsevier BV, 2012)

The deposition rate of the standard (i.e. sequential) atomic layer deposition (ALD) process is very low compared to the plasma-enhanced chemical vapour deposition (PECVD) process. Therefore, as a short- and medium-term ...
Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon

Veith, Boris; Werner, Florian; Zielke, Dimitri; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)

We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) ...
High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells

Werner, Florian; Stals, Walter; Görtzen, Roger; Veith, Boris; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)

High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous ...
Improved parameterization of Auger recombination in silicon

Richter, A.; Werner, F.; Cuevas, A.; Schmidt, J.; Glunz, S.W. (London : Elsevier Ltd., 2012)

Accurate modeling of the intrinsic recombination in silicon is important for device simulation as well as for interpreting measured effective carrier lifetime data. In this contribution we study the injection-dependent ...
Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells

Werner, Florian; Cosceev, A.; Schmidt, Jan (Amsterdam : Elsevier BV, 2012)

The interface between p- and n-type FZ-Si and an amorphous aluminum oxide (Al2O3) surface passivation layer deposited by plasma-assisted atomic layer deposition (ALD) was investigated by frequency-dependent conductance ...
Supressing loss channels in the bulk and at the surface of crystalline silicon solar cells

Zielke, Dimitri (Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2016)

[no abstract]

Now showing items 1-8 of 8

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Browsing by Subject "Aluminum oxide"

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