Auflistung nach Schlagwort "Aluminum"

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  • Schmidt, Jan; Werner, Florian; Veith, Boris; Zielke, Dimitri; Steingrube, S.; Altermatt, Pietro P.; Gatz, Sebastian; Dullweber, Thorsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2012)
    The surface passivation properties of aluminium oxide (Al 2O 3) on crystalline Si are compared with the traditional passivation system of silicon nitride (SiN x). It is shown that Al 2O 3 has fundamental advantages over ...
  • Klug, Benjamin; Specht, André; Horst, Walter J. (Oxford : Oxford University Press, 2011)
    Aluminium (Al) uptake and transport in the root tip of buckwheat is not yet completely understood. For localization of Al in root tips, fluorescent dyes and laser ablation inductively coupled plasma mass spectrometry ...
  • Jacobsen, Karsten (Göttingen : Copernicus GmbH, 2016)
    The geometry of digital height models (DHM) determined with optical satellite stereo combinations depends upon the image orientation, influenced by the satellite camera, the system calibration and attitude registration. ...
  • Gatz, Sebastian; Bothe, Karsten; Müller, Jens; Dullweber, Thorsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)
    In this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance ...
  • Veith, Boris; Werner, Florian; Zielke, Dimitri; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)
    We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) ...
  • Klug, B.; Kirchner, Thomas W.; Horst, Walter Johannes (Basel : MDPI AG, 2015)
    Aluminium (Al) toxicity is a major factor reducing crop productivity worldwide. There is a broad variation in intra- and inter-specific Al resistance. Whereas the Al resistance mechanisms have generally been well explored ...
  • Mader, Christoph; Bock, Robert; Müller, Jens; Schmidt, Jan; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)
    Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 ...
  • Werner, Florian; Stals, Walter; Görtzen, Roger; Veith, Boris; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)
    High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous ...
  • Šepelák, Vladimir; Bergmann, Ingo; Indris, Sylvio; Feldhoff, Armin; Hahn, Horst; Becker, Klaus-Dieter; Grey, Clare P.; Heitjans, Paul (Cambridge : Royal Society of Chemistry, 2011)
    The response of the local structure of various types of spinel aluminates, ZnAl2O4 (normal spinel), MgAl2O4 (partly inverse spinel), and Li0.5Al2.5O4 (fully inverse spinel), to mechanical action through high-energy milling ...
  • Behrens, Bernd-Arno; Nürnberger, F.; Bonk, Christian; Hübner, S.; Behrens, S.; Vogt, H. (Bristol : Institute of Physics Publishing, 2017)
    Aluminum alloys of the 7000 series possess high lightweight potential due to their high specific tensile strength combined with a good ultimate elongation. For this reason, hot-formed boron-manganese-steel parts can be ...
  • Niepelt, Raphael; Hensen, Jan; Steckenreiter, Verena; Brendel, Rolf; Kajari-Schröder, Sarah (Cambridge : Cambridge University Press, 2015)
    We report on a kerfless exfoliation approach to further reduce the costs of crystalline silicon photovoltaics making use of evaporated Al as a double functional layer. The Al serves as the stress inducing element to drive ...
  • Haase, Felix; Rojas, Enrique Garralaga; Bothe, Karsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)
    High efficiency solar cells require high generation and low recombination rates. High bulk lifetime, well passivated surfaces, and lowly doped thin emitters allow for low recombination rates. Thin passivated emitters should ...
  • Thürer, Susanne Elisabeth; Uhe, Johanna; Golovko, Oleksandr; Bonk, Christian; Bouguecha, Anas; Behrens, Bernd-Arno; Klose, Christian (Pfaffikon : Scientific.Net, 2017)
    Within the scope of the Collaborative Research Centre (CRC) 1153 novel process chains for the production of hybrid solid components by Tailored Forming are developed at the Leibniz Universität Hannover. The combination of ...
  • Turowski, Marcus; Jupé, Marco; Melzig, Thomas; Pflug, Andreas; Ristau, Detlev (Bellingham, WA : S P I E - International Society for Optical Engineering, 2015)
    A multiple scale model approach is presented in order to investigate Al2O3 thin film growth in the framework of an existing Ion Beam Sputtering (IBS) coating process. Therefore, several simulation techniques are combined ...
  • Braam, Miranda; Beyrich, Frank; Bange, Jens; Platis, Andreas; Martin, Sabrina; Maronga, Björn; Moene, Arnold F. (Dordrecht : Springer Netherlands, 2016)
    We elaborate on the preliminary results presented in Beyrich et al. (in Boundary-Layer Meteorol 144:83–112, 2012), who compared the structure parameter of temperature (C2T) obtained with the unmanned meteorological mini ...
  • Müller, Jens; Bothe, Karsten; Gatz, Sebastian; Plagwitz, Heiko; Schubert, Gunnar; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)
    The application of local aluminum (Al)-alloyed contacts to the p-type base of silicon solar cells reduces minority charge carrier recombination due to the formation of a local back surface field (LBSF). We study the ...
  • Stolbchenko, Mykhailo; Grydin, Olexandr; Nürnberger, Florian; Samsonenko, Andrii; Schaper, Mirko (Amsterdam : Elsevier, 2014)
    In the present study experimental results of twin-roll cast aluminium-steel clad strips of a thickness of 2.0 mm using the example of pure aluminium and an austenitic steel are presented. Electron probe measurements of the ...
  • Schulte-Huxel, Henning; Petermann, Jan-Hendrik; Blankemeyer, Susanne; Steckenreiter, Verena; Kajari-Schröder, Sarah; Brendel, Rolf (London : Elsevier Ltd., 2016)
    The back end process of passivated emitter and rear cells (PERC) consists of at least one laser process and three screen-printing steps followed by the stringing and tabbing of the cells. To reduce the number of steps we ...
  • Ohrdes, Tobias; Steingrube, S.; Wagner, Hannes; Zechner, C.; Letay, G.; Chen, R.; Dunham, S.T.; Altermatt, Pietro P. (Amsterdam : Elsevier BV, 2011)
    A potentially cost-effective ion implanter for solar cells has become commercially available very recently. As the emitter dopant profiles differ from the standard diffusions, a combination of process simulation and device ...
  • Gesing, Thorsten M.; Schowalter, Marco; Weidenthaler, Claudia; Murshed, M. Mangir; Nénert, Gwilherm; Mendive, Cecilia B.; Curti, Mariano; Rosenauer, Andreas; Buhl, J.-Christian; Schneider, Hartmut; Fischer, Reinhard X. (Cambridge : Royal Society of Chemistry, 2012)
    We report on strontium doped dibismuth-nonaoxoaluminate(III) produced at 1023 K. Partial substitution of bismuth by strontium in the structure yields oxygen vacancies for charge balance. Introducing oxygen vacancies ...