Browsing by Subject "Recombination velocity"

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Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation

Mader, Christoph; Bock, Robert; Müller, Jens; Schmidt, Jan; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)

Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 ...
Recombination at local aluminum-alloyed silicon solar cell base contacts by dynamic infrared lifetime mapping

Müller, Jens; Bothe, Karsten; Gatz, Sebastian; Plagwitz, Heiko; Schubert, Gunnar; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)

The application of local aluminum (Al)-alloyed contacts to the p-type base of silicon solar cells reduces minority charge carrier recombination due to the formation of a local back surface field (LBSF). We study the ...

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