Auflistung nach Autor/in "cfec6a23-5312-4ab9-b96b-d5d49da99b1c"

Auflistung nach Autor/in "cfec6a23-5312-4ab9-b96b-d5d49da99b1c"

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  • Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system 
    Keyser, U.F.; Schumacher, Hans W.; Zeitler, U.; Haug, Rolf J.; Eberl, K. (College Park, MD : American Institute of Physics, 2000)
    The surface layers of a GaAs/AlGaAs heterostructure are locally oxidized using an atomic force microscope. The local anodic oxidation depletes the underlying two-dimensional electron gas leading to the formation of tunneling ...
  • Magnetic control of electric-field domains in semiconductor superlattices 
    Schmidt, T.; Jansen, A.G.M.; Haug, Rolf J.; Klitzing, K.V.; Eberl, K. (College Park, MD : American Physical Society, 1998)
    Applying magnetic fields up to B = 29 T, we investigate the formation of electric-field domains in Landau-quantized semiconductor superlattices. Surprisingly, the electric-field distribution remains determined by the subband ...
  • Nanomachining of mesoscopic electronic devices using an atomic force microscope 
    Schumacher, Hans W.; Keyser, U.F.; Zeitler, U.; Haug, Rolf J.; Eberl, K. (College Park, MD : American Institute of Physics, 1999)
    An atomic force microscope (AFM) is used to locally deplete the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The depletion is induced by repeated mechanical scribing of the surface layers of the ...
  • Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands 
    Schmidt, O.G.; Denker, U.; Eberl, K.; Kienzle, O.; Ernst, F.; Haug, Rolf J. (College Park, MD : American Institute of Physics, 2000)
    Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high ...