Voronkov, Vladimir V.; Falster, Robert; Batunina, A.V.; MacDonald, D.; Bothe, Karsten; Schmidt, J.
(London : Elsevier Ltd., 2011)
The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, ...