dc.identifier.uri |
http://dx.doi.org/10.15488/4484 |
|
dc.identifier.uri |
https://www.repo.uni-hannover.de/handle/123456789/4524 |
|
dc.contributor.author |
Titova, Valeriya
|
|
dc.contributor.author |
Schmidt, Jan
|
|
dc.date.accessioned |
2019-03-06T09:48:58Z |
|
dc.date.available |
2019-03-06T09:48:58Z |
|
dc.date.issued |
2018 |
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dc.identifier.citation |
Titova, V.; Schmidt, J.: Implementation of full-area-deposited electron-selective TiOx layers into silicon solar cells. In: AIP Advances 8 (2018), Nr. 12, 125023. DOI: https://doi.org/10.1063/1.5061924 |
|
dc.description.abstract |
We examine two different silicon solar cell designs featuring full-area electron-selective contacts based on ultrathin (2-3 nm) titanium oxide (TiOx) films deposited by atomic layer deposition. The first cell design applies a layer stack to the cell front, which is composed of an ultrathin intrinsic amorphous silicon (i-a-Si:H) layer for interface passivation, the TiOx film and an indium tin oxide (ITO) layer to provide a good lateral conductance for electrons to the metal fingers. Whereas carrier lifetime measurements on test structures promise high implied open-circuit voltages Voc up to 726 mV, the realized solar cells achieve disappointingly low Voc values <400 mV. The J-V parameters of this cell type are negatively affected by a reverse diode occurring due to the contacting of the TiOx by the high-work function ITO layer. In the second cell type, we implement a layer stack to the cell rear, which is composed of an ultrathin silicon oxide (SiOy) layer, the TiOx film and a full-area-deposited aluminum (Al) layer. Initial Voc values of these cells are relatively low (<600 mV), but improve significantly after annealing at 350°C. The best cell featuring a SiOy/TiOx/Al rear contact achieves an open-circuit voltage of 661 mV and an efficiency of 20.3%. No reverse diode is observed, which is attributed to the lower work function of the Al compared to ITO in the first cell design. From internal quantum efficiency measurements, we extract a rear surface recombination velocity Srear of (52±20) cm/s for our best cell, which is well compatible with efficiencies exceeding 23%. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
College Park, MD : American Institute of Physics |
|
dc.relation.ispartofseries |
AIP Advances 8 (2018), Nr. 12 |
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dc.rights |
CC BY 4.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by/4.0/ |
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dc.subject |
Aluminum coatings |
eng |
dc.subject |
Aluminum compounds |
eng |
dc.subject |
Amorphous films |
eng |
dc.subject |
Amorphous silicon |
eng |
dc.subject |
Atomic layer deposition |
eng |
dc.subject |
Carrier lifetime |
eng |
dc.subject |
Efficiency |
eng |
dc.subject |
Open circuit voltage |
eng |
dc.subject |
Oxide films |
eng |
dc.subject |
Silicon compounds |
eng |
dc.subject |
Silicon oxides |
eng |
dc.subject |
Solar cells |
eng |
dc.subject |
Tin oxides |
eng |
dc.subject |
Titanium oxides |
eng |
dc.subject |
Ultrathin films |
eng |
dc.subject |
Work function |
eng |
dc.subject |
Carrier lifetime measurements |
eng |
dc.subject |
Indium tin oxide layers |
eng |
dc.subject |
Interface passivation |
eng |
dc.subject |
Internal quantum efficiency |
eng |
dc.subject |
Lateral conductance |
eng |
dc.subject |
Selective contacts |
eng |
dc.subject |
Surface recombination velocities |
eng |
dc.subject |
Ultrathin silicon oxide |
eng |
dc.subject |
Silicon solar cells |
eng |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Implementation of full-area-deposited electron-selective TiOx layers into silicon solar cells |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
2158-3226 |
|
dc.relation.doi |
https://doi.org/10.1063/1.5061924 |
|
dc.bibliographicCitation.issue |
12 |
|
dc.bibliographicCitation.volume |
8 |
|
dc.bibliographicCitation.firstPage |
125023 |
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dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
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