dc.identifier.uri |
http://dx.doi.org/10.15488/261 |
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dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/283 |
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dc.contributor.author |
Bredemeier, Dennis
|
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dc.contributor.author |
Walter, Dominic
|
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dc.contributor.author |
Herlufsen, Sandra
|
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dc.contributor.author |
Schmidt, Jan
|
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dc.date.accessioned |
2016-04-05T09:16:47Z |
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dc.date.available |
2016-04-05T09:16:47Z |
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dc.date.issued |
2016 |
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dc.identifier.citation |
Bredemeier, D.; Walter, D.; Herlufsen, S.; Schmidt, J.: Lifetime degradation and regeneration in multicrystalline silicon under illumination at elevated temperature. In: AIP Advances 6 (2016), 035119. DOI: http://dx.doi.org/10.1063/1.4944839 |
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dc.description.abstract |
We examine the carrier lifetime evolution of block-cast multicrystalline silicon (mc-Si) wafers under illumination (100 mW/cm2) at elevated temperature (75◦C). Samples are treated with different process steps typically applied in industrial solar cell production. We observe a pronounced degradation in lifetime after rapid thermal annealing (RTA) at 900◦C. However, we detect only a weak lifetime instability in mc-Si wafers which are TA-treated at 650◦C. After completion of the degradation, the lifetime is observed to recover and finally reaches carrier lifetimes comparable to the initial state. To explain the observed lifetime evolution, we suggest a defect model, where metal precipitates in the mc-Si bulk dissolve during the RTA treatment. |
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dc.description.sponsorship |
German State of Lower Saxony |
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dc.description.sponsorship |
German Federal Ministra of Economics and Energy |
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dc.description.sponsorship |
SolarLIFE/0325763C |
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dc.language.iso |
eng |
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dc.publisher |
Melville, NY : American Institute of Physics |
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dc.relation.ispartofseries |
AIP Advances 6 (2016), Nr. 3 |
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dc.rights |
CC BY 4.0 Unported |
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dc.rights.uri |
http://creativecommons.org/licenses/by/4.0/ |
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dc.subject |
Illumination |
eng |
dc.subject |
Semiconductor device fabrication |
eng |
dc.subject |
Solar cells |
eng |
dc.subject |
Crystal defects |
eng |
dc.subject |
Carrier lifetimes |
eng |
dc.subject |
Kristalldefekt |
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dc.subject |
Solarzellen |
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dc.subject.classification |
Solarzelle |
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dc.subject.classification |
Gitterbaufehler |
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dc.subject.classification |
Halbleiterbauelement |
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dc.subject.classification |
Lebensdauer |
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dc.subject.classification |
Beleuchtung |
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dc.subject.ddc |
530 | Physik
|
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dc.title |
Lifetime degradation and regeneration in multicrystalline silicon under illumination at elevated temperature |
eng |
dc.type |
Article |
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dc.type |
Text |
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dc.relation.essn |
2158-3226 |
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dc.relation.doi |
http://dx.doi.org/10.1063/1.4944839 |
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dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
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