dc.identifier.uri |
http://dx.doi.org/10.15488/4 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/22 |
|
dc.contributor.author |
Baringhaus, Jens
|
|
dc.contributor.author |
Stöhr, Alexander
|
|
dc.contributor.author |
Forti, Stiven
|
|
dc.contributor.author |
Starke, Ulrich
|
|
dc.contributor.author |
Tegenkamp, Christoph
|
|
dc.date.accessioned |
2015-07-24T10:02:41Z |
|
dc.date.available |
2015-07-24T10:02:41Z |
|
dc.date.issued |
2015-04-21 |
|
dc.identifier.citation |
Baringhaus, Jens; Stöhr, Alexander; Forti, Stiven; Starke, Ulrich; Tegenkamp, Christoph: Ballistic bipolar junctions in chemically gated graphene ribbons. In: Scientific Reports 5 (2015), Artikelnr. 9955. DOI: http://dx.doi.org/10.1038/srep09955 |
|
dc.description.abstract |
The realization of ballistic graphene pn-junctions is an essential task in order to study Klein tunneling phenomena. Here we show that intercalation of Ge under the buffer layer of pre-structured SiC-samples succeeds to make truly nano-scaled pn-junctions. By means of local tunneling spectroscopy the junction width is found to be as narrow as 5 nm which is a hundred times smaller compared to electrically gated structures. The ballistic transmission across the junction is directly proven by systematic transport measurements with a 4-tip STM. Various npn- and pnp-junctions are studied with respect to the barrier length. The pn-junctions are shown to act as polarizer and analyzer with the second junction becoming transparent in case of a fully ballistic barrier. This can be attributed to the almost full suppression of electron transmission through the junction away from normal incidence. |
eng |
dc.description.sponsorship |
DFG/SPP/1459 |
|
dc.language.iso |
eng |
eng |
dc.publisher |
London : Nature Publishing Group |
|
dc.relation.requires |
http://www.nature.com/srep/2015/150421/srep09955/extref/srep09955-s1.pdf |
|
dc.rights |
CC BY 4.0 Unported |
|
dc.rights.uri |
http://creativecommons.org/licenses/by/4.0/ |
|
dc.subject |
Surfaces |
eng |
dc.subject |
interfaces and thin films |
eng |
dc.subject |
Graphene |
eng |
dc.subject |
Electronic properties and devices |
eng |
dc.subject |
Graphen |
ger |
dc.subject |
Oberfläche |
ger |
dc.subject.classification |
Graphen |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Ballistic bipolar junctions in chemically gated graphene ribbons |
eng |
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
2045-2322 |
|
dc.relation.doi |
http://dx.doi.org/10.1038/srep09955 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|