Precisely controlled batch-fabrication of highly sensitive co-resonant cantilever sensors from silicon-nitride

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dc.identifier.uri http://dx.doi.org/10.15488/16934
dc.identifier.uri https://www.repo.uni-hannover.de/handle/123456789/17061
dc.contributor.author Lampouras, Ioannis
dc.contributor.author Holz, Mathias
dc.contributor.author Strehle, Steffen
dc.contributor.author Körner, Julia
dc.date.accessioned 2024-04-08T08:18:07Z
dc.date.available 2024-04-08T08:18:07Z
dc.date.issued 2023
dc.identifier.citation Lampouras, I.; Holz, M.; Strehle, S.; Körner, J.: Precisely controlled batch-fabrication of highly sensitive co-resonant cantilever sensors from silicon-nitride. In: Journal of Micromechanics and Microengineering 34 (2024), Nr. 1, 015005. DOI: https://doi.org/10.1088/1361-6439/ad0d80
dc.description.abstract Dynamic-mode cantilever sensors are based on the principle of a one-side clamped beam being excited to oscillate at or close to its resonance frequency. An external interaction on the cantilever alters its oscillatory state, and this change can be detected and used for quantification of the external influence (e.g. a force or mass load). A very promising approach to significantly improve sensitivity without modifying the established laser-based oscillation transduction is the co-resonant coupling of a micro- and a nanocantilever. Thereby, each resonator is optimized for a specific purpose, i.e. the microcantilever for reliable oscillation detection and the nanocantilever for highest sensitivity through low rigidity and mass. To achieve the co-resonant state, the eigenfrequencies of micro- and nanocantilever need to be adjusted so that they differ by less than approximately 20%. This can either be realized by mass deposition or trimming of the nanocantilever, or by choice of dimensions. While the former is a manual and error-prone process, the latter would enable reproducible batch fabrication of coupled systems with predefined eigenfrequency matching states and therefore sensor properties. However, the approach is very challenging as it requires a precisely controlled fabrication process. Here, for the first time, such a process for batch fabrication of inherently geometrically eigenfrequency matched co-resonant cantilever structures is presented and characterized. It is based on conventional microfabrication techniques and the structures are made from 1 µm thick low-stress silicon nitride. They comprise the microcantilever and high aspect ratio nanocantilever (width 2 µm, thickness about 100 nm, lengths up to 80 µm) which are successfully realized with only minimal bending. An average yield of > 80 % of intact complete sensor structures per wafer is achieved. Desired geometric dimensions can be realized within ±1% variation for length and width of the microcantilever and nanocantilever length, ±10% and ±20% for the nanocantilever width and thickness, respectively, resulting in an average variation of its eigenfrequency by 11%. Furthermore, the dynamic oscillation properties are verified by vibration experiments in a scanning electron microscope. The developed process allows for the first time the batch fabrication of co-resonantly coupled systems with predefined properties and controlled matching states. This is an important step and crucial foundation for a broader applicability of the co-resonant approach for sensitivity enhancement of dynamic-mode cantilever sensors. eng
dc.language.iso eng
dc.publisher Bristol : Inst.
dc.relation.ispartofseries Journal of Micromechanics and Microengineering 34 (2024), Nr. 1
dc.rights CC BY 4.0 Unported
dc.rights.uri https://creativecommons.org/licenses/by/4.0
dc.subject batch-fabrication eng
dc.subject cantilever sensors eng
dc.subject co-resonant sensitivity enhancement eng
dc.subject geometric eigenfrequency matching eng
dc.subject microcantilever and high aspect ratio nanocantilever eng
dc.subject microfabrication eng
dc.subject silicon nitride MEMS eng
dc.subject.ddc 530 | Physik
dc.title Precisely controlled batch-fabrication of highly sensitive co-resonant cantilever sensors from silicon-nitride eng
dc.type Article
dc.type Text
dc.relation.essn 1361-6439
dc.relation.issn 0960-1317
dc.relation.doi https://doi.org/10.1088/1361-6439/ad0d80
dc.bibliographicCitation.issue 1
dc.bibliographicCitation.volume 34
dc.bibliographicCitation.date 2024
dc.bibliographicCitation.firstPage 015005
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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