dc.identifier.uri |
http://dx.doi.org/10.15488/15498 |
|
dc.identifier.uri |
https://www.repo.uni-hannover.de/handle/123456789/15619 |
|
dc.contributor.author |
Madumelu, Chukwuka
|
|
dc.contributor.author |
Cai, Yalun
|
|
dc.contributor.author |
Hollemann, Christina
|
|
dc.contributor.author |
Peibst, Robby
|
|
dc.contributor.author |
Hoex, Bram
|
|
dc.contributor.author |
Hallam, Brett J.
|
|
dc.contributor.author |
Soeriyadi, Anastasia H.
|
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dc.date.accessioned |
2023-11-24T05:59:02Z |
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dc.date.available |
2023-11-24T05:59:02Z |
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dc.date.issued |
2023 |
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dc.identifier.citation |
Madumelu, C.; Cai, Y.; Hollemann, C.; Peibst, R.; Hoex, B. et al.: Assessing the stability of p+ and n+ polysilicon passivating contacts with various capping layers on p-type wafers. In: Solar Energy Materials and Solar Cells 253 (2023), 112245. DOI: https://doi.org/10.1016/j.solmat.2023.112245 |
|
dc.description.abstract |
Polysilicon (poly-Si)-on-oxide passivating contact structures (POLO/TOPCon) enable high-efficiency solar cells as they simultaneously provide a very high level of surface passivation and a high conductance for either electrons or holes. The ease of incorporation with existing manufacturing lines and their tolerance for high-temperature processing has increased the wide acceptance of this structure in the PV industry. In this report, we explore the effects of short high-temperature annealing required for effective hydrogenation and formation of ohmic screen-printed contacts across a wide temperature range (636 °C–846 °C) on the stability of passivating contact structures. We study this on p-type c-Si substrates with phosphorus-doped (n-type) or boron-doped (p-type) polysilicon contacts capped with either an AlOx or SiNx coating. Our experimental results show that irrespective of the poly-Si doping type, AlOx-capped samples suffer a loss in surface passivation across the investigated temperature range, while SiNx-capped samples show an improvement at lower annealing temperatures. Above 744 °C, severely ruptured blisters occur for the samples coated with a SiNx layer, leading to lift-off of the poly layer in extreme cases, and in all cases, significant surface passivation losses, up to 99%. A study of the long-term stability of these fired samples under 1-sun illumination @ 140 °C shows that they suffer from both bulk and surface-like instabilities. Two degradation cycles were observed: the first, a boron-oxygen light-induced degradation (BO-LID) observed after 5 min, with capture cross-section ratios of 15.8–19.2, and a slower secondary degradation, similar to light and elevated temperature-induced degradation (LeTID), with maximum degradation reached after ∼ 14 days. The presence of a silicon nitride layer does not appear to influence the kinetics of post-degradation recovery. Our results suggest that the effect of firing may be influenced by the polarity of the bulk c-Si or perhaps the chemistry of the SiNx film and highlight that passivating contact structures based on p-type c-Si may offer better long-term stability than those based on n-type c-Si. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
Amsterdam [u.a.] : NH, Elsevier |
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dc.relation.ispartofseries |
Solar Energy Materials and Solar Cells 253 (2023) |
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dc.rights |
CC BY 4.0 Unported |
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dc.rights.uri |
https://creativecommons.org/licenses/by/4.0 |
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dc.subject |
Aluminum compounds |
eng |
dc.subject |
Boron |
eng |
dc.subject |
Passivation |
eng |
dc.subject |
Polycrystalline materials |
eng |
dc.subject |
Semiconductor doping |
eng |
dc.subject |
Silicon nitride |
eng |
dc.subject |
Silicon wafers |
eng |
dc.subject |
Stability |
eng |
dc.subject.ddc |
530 | Physik
|
|
dc.subject.ddc |
620 | Ingenieurwissenschaften und Maschinenbau
|
|
dc.title |
Assessing the stability of p+ and n+ polysilicon passivating contacts with various capping layers on p-type wafers |
eng |
dc.type |
Article |
|
dc.type |
Text |
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dc.relation.issn |
0927-0248 |
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dc.relation.doi |
https://doi.org/10.1016/j.solmat.2023.112245 |
|
dc.bibliographicCitation.volume |
253 |
|
dc.bibliographicCitation.firstPage |
112245 |
|
dc.description.version |
publishedVersion |
eng |
tib.accessRights |
frei zug�nglich |
|
dc.bibliographicCitation.articleNumber |
112245 |
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