dc.identifier.uri |
http://dx.doi.org/10.15488/1155 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/1179 |
|
dc.contributor.author |
Steingrube, S.
|
|
dc.contributor.author |
Wagner, Hannes
|
|
dc.contributor.author |
Hannebauer, Helge
|
|
dc.contributor.author |
Gatz, Sebastian
|
|
dc.contributor.author |
Chen, R.
|
|
dc.contributor.author |
Dunham, S.T.
|
|
dc.contributor.author |
Dullweber, Thorsten
|
|
dc.contributor.author |
Altermatt, Pietro P.
|
|
dc.contributor.author |
Brendel, Rolf
|
|
dc.date.accessioned |
2017-02-23T13:12:50Z |
|
dc.date.available |
2017-02-23T13:12:50Z |
|
dc.date.issued |
2011 |
|
dc.identifier.citation |
Steingrube, S.; Wagner, H.; Hannebauer, H.; Gatz, S.; Chen, R. et al.: Loss analysis and improvements of industrially fabricated Cz-Si solar cells by means of process and device simulations. In: Energy Procedia 8 (2011), S. 263-268. DOI: https://doi.org/10.1016/j.egypro.2011.06.134 |
|
dc.description.abstract |
We model currently fabricated industrial-type screen-printed boron-doped Cz silicon solar cells using a combination of process and device simulations. The model reproduces the experimental results precisely and allows us to predict both the efficiency gain after specific cell improvements and the associated thermal budgets. Separating the resistive losses (evaluated for various contributions) from the recombination losses (evaluated in different device regions) allows us to forecast the improvements of the emitter and the rear side necessary such that the recombination losses in the base dominate. We predict that to increase cell efficiency considerably beyond 19.7 %, the base material needs to be improved. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
Amsterdam : Elsevier BV |
|
dc.relation.ispartofseries |
Energy Procedia 8 (2011) |
|
dc.rights |
CC BY-NC-ND 3.0 Unported |
|
dc.rights.uri |
https://creativecommons.org/licenses/by-nc-nd/3.0/ |
|
dc.subject |
Cz-Si |
eng |
dc.subject |
Device simulations |
eng |
dc.subject |
Loss analysis |
eng |
dc.subject |
Process simulations |
eng |
dc.subject |
Si solar cells |
eng |
dc.subject |
Solar cell improvement |
eng |
dc.subject |
Cz-Si |
eng |
dc.subject |
Device simulations |
eng |
dc.subject |
Loss analysis |
eng |
dc.subject |
Process simulations |
eng |
dc.subject |
Si solar cells |
eng |
dc.subject |
Boron |
eng |
dc.subject |
Crystalline materials |
eng |
dc.subject |
Forecasting |
eng |
dc.subject |
Nanostructured materials |
eng |
dc.subject |
Optical losses |
eng |
dc.subject |
Photovoltaic effects |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Silicon solar cells |
eng |
dc.subject |
Computer simulation |
eng |
dc.subject.classification |
Konferenzschrift |
ger |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Loss analysis and improvements of industrially fabricated Cz-Si solar cells by means of process and device simulations |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
1876-6102 |
|
dc.relation.doi |
https://doi.org/10.1016/j.egypro.2011.06.134 |
|
dc.bibliographicCitation.volume |
8 |
|
dc.bibliographicCitation.firstPage |
263 |
|
dc.bibliographicCitation.lastPage |
268 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|