Zusammenfassung: | |
High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous surface passivation at a deposition rate of ∼30 nm/min on 15.6×15.6 cm2 silicon wafers of 10 nm thick Al 2O3 layers deposited in a novel inline spatial ALD system. The effective surface recombination velocity on n-type Czochralski-grown (Cz) silicon wafers is shown to be virtually independent of injection level. Surface recombination velocities below 2.9 cm/s and an extremely low interface state density below 8×1010 eV-1cm-2 are achieved. We demonstrate that the novel inline spatial ALD system provides the means to integrate Al2O3 passivation layers into industrial solar cells.
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Lizenzbestimmungen: | CC BY-NC-ND 3.0 Unported - https://creativecommons.org/licenses/by-nc-nd/3.0/ |
Publikationstyp: | Article |
Publikationsstatus: | publishedVersion |
Erstveröffentlichung: | 2011 |
Schlagwörter (englisch): | Aluminum oxide, Silicon, Spatial ALD, Surface passivation, Aluminum oxides, High quality, High rate, Homogeneous surfaces, In-line, Industrial solar cells, Injection levels, Interface state density, Passivation layer, Si solar cells, Spatial ALD, Surface passivation, Surface recombination velocities, Aluminum, Aluminum coatings, Atomic layer deposition, Crystalline materials, Oxide films, Oxides, Photovoltaic effects, Semiconducting silicon compounds, Silicon solar cells, Silicon wafers, Passivation |
Fachliche Zuordnung (DDC): | 530 | Physik |
Kontrollierte Schlagwörter: | Konferenzschrift |
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