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Browsing by Subject "Silicon nitride"

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Advances in the surface passivation of silicon solar cells

Schmidt, Jan; Werner, Florian; Veith, Boris; Zielke, Dimitri; Steingrube, S.; Altermatt, Pietro P.; Gatz, Sebastian; Dullweber, Thorsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2012)

The surface passivation properties of aluminium oxide (Al 2O 3) on crystalline Si are compared with the traditional passivation system of silicon nitride (SiN x). It is shown that Al 2O 3 has fundamental advantages over ...
Assessing the stability of p+ and n+ polysilicon passivating contacts with various capping layers on p-type wafers

Madumelu, Chukwuka; Cai, Yalun; Hollemann, Christina; Peibst, Robby; Hoex, Bram; Hallam, Brett J.; Soeriyadi, Anastasia H. (Amsterdam [u.a.] : NH, Elsevier, 2023)

Polysilicon (poly-Si)-on-oxide passivating contact structures (POLO/TOPCon) enable high-efficiency solar cells as they simultaneously provide a very high level of surface passivation and a high conductance for either ...
Atomic-Layer-Deposited Al2O3 as Effective Barrier against the Diffusion of Hydrogen from SiNx:H Layers into Crystalline Silicon during Rapid Thermal Annealing

Helmich, Lailah; Walter, Dominic C.; Bredemeier, Dennis; Schmidt, Jan (Weinheim : Wiley-VCH, 2020)

Stacks of hydrogen-lean aluminum oxide, deposited via plasma-assisted atomic-layer-deposition, and hydrogen-rich plasma-enhanced chemical vapor-deposited silicon nitride (SiNx) are applied to boron-doped float-zone silicon ...
Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon

Veith, Boris; Werner, Florian; Zielke, Dimitri; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)

We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) ...
Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation

Mader, Christoph; Bock, Robert; Müller, Jens; Schmidt, Jan; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)

Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 ...
Hierarchical Etching for Improved Optical Front-side Properties of Monocrystalline Si Solar Cells

Heinemeyer, Frank; Steckenreiter, Verena; Kiefer, Fabian; Peibst, Robby (London : Elsevier Ltd., 2015)

We investigate a hierarchical surface structuring process to reduce the optical reflectance of monocrystalline Si solar cells to below the reflectance of state-of-the-art alkaline texturing. First, alkaline texturing is ...
Laser interferometry with translucent and absorbing mechanical oscillators

Friedrich, Daniel; Kaufer, Henning; Westphal, Tobias; Yamamoto, K.; Sawadsky, Andreas; Ya Khalili, F.; Danilishin, S.L.; Goßler, Stefan; Danzmann, Karsten; Schnabel, Roman (Bristol : IOP Publishing Ltd., 2011)

The sensitivity of laser interferometers can be pushed into regimes that enable the direct observation of the quantum behaviour of mechanical oscillators. In the past, membranes with subwavelength thickness (thin films) ...
Layer selective laser ablation for local contacts to thin emitters

Haase, Felix; Rojas, Enrique Garralaga; Bothe, Karsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)

High efficiency solar cells require high generation and low recombination rates. High bulk lifetime, well passivated surfaces, and lowly doped thin emitters allow for low recombination rates. Thin passivated emitters should ...
Microfabrication of Alkali Vapor MEMS Cells for chip-scale atomic clock

Kazakin, A.; Kleimanov, R.; Komarevtsev, I.; Kondrateva, A.; Enns, Y.; Shashkin, A.; Glukhovskoy, A. (Bristol : IOP Publ., 2021)

The technology of MEMS atomic cells containing rubidium or caesium vapors in an atmosphere of neon buffer gas has been developed. Two-chamber silicon cells containing an optical cavity, shallow filtration channels and a ...
Numerical Modeling of c-Si PV Modules by Coupling the Semiconductor with the Thermal Conduction, Convection and Radiation Equations

Vogt, Malte R.; Holst, Hendrik; Winter, Matthias; Brendel, Rolf; Altermatt, Pietro P. (Amsterdam : Elsevier, 2015)

Commonly, the thermal behavior of solar cell modules is calculated with analytical approaches using non wavelength-dependent optical data. Here, we employ ray tracing of entire solar modules at wavelengths of 300-2500 nm ...
The effect of oxide precipitates on minority carrier lifetime in n-type silicon

Murphy, J.D.; Al-Amin, M.; Bothe, K.; Olmo, M.; Voronkov, V.V.; Falster, R.J. (College Park, MD : American Institute of Physics, 2015)

Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related extended defects give rise to ...

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