Browsing by Subject "Excess carrier concentration"

Now showing items 1-2 of 2

Extraction of PEDOT:PSS/c-Si Junction Properties by Modeling of Injection-Dependent Lifetime Measurements Including Depletion Region Modulation

Halbich, Marc-Uwe; Schmidt, Jan (Weinheim : Wiley-VCH, 2021)

The carrier lifetime of n-type silicon wafers coated with the conducting polymer PEDOT:PSS as a function of the excess carrier concentration Δp within the wafer is characterized using the quasi-steady-state photoconductance ...
Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

Steckenreiter, Verena; Walter, Dominic C.; Schmidt, Jan (Melville, NY : American Institute of Physics Inc., 2017)

Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related ...

Now showing items 1-2 of 2

Browse