Schmidt, T.; Haug, R.J.; Fal'ko, V.I.; v. Klitzing, K.; Förster, A.; Lüth, H.: Observation of the local structure of landau bands in a disordered conductor. In: Physical Review Letters 78 (1997), Nr. 8, S. 1540-1543. DOI:
https://doi.org/10.1103/PhysRevLett.78.1540
Zusammenfassung: |
The local density of states of heavily doped GaAs is explored at high magnetic fields, where only a single or few Landau bands are occupied. Our experiment is based on resonant tunneling through impurity states and images the local density of states both below and above the Fermi level. Fan-type mesoscopic fluctuations are observed in the energy-magnetic-field plane, which we attribute to the interplay of Landau quantization and quantum interference of scattered electron waves in the disordered conductor. Our conclusion is supported by the suppression of the fluctuations high above the Fermi level, where dephasing due to inelastic processes is as fast as elastic scattering.
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Lizenzbestimmungen: |
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Publikationstyp: |
Article |
Publikationsstatus: |
publishedVersion |
Erstveröffentlichung: |
1997 |
Schlagwörter (englisch): |
Calculations, Carrier concentration, Electron resonance, Electron tunneling, Electronic density of states, Fermi level, Magnetic field effects, Semiconducting gallium arsenide, Spectrometers, Electron waves, Impurity states, Inelastic processes, Landau bands, Landau quantization, Quantum interference, Band structure
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Fachliche Zuordnung (DDC): |
530 | Physik
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