dc.identifier.uri |
http://dx.doi.org/10.15488/2842 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/2868 |
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dc.contributor.author |
Dorozhkin, S.I.
|
|
dc.contributor.author |
Smet, J.H.
|
|
dc.contributor.author |
von Klitzing, K.
|
|
dc.contributor.author |
Umansky, V.
|
|
dc.contributor.author |
Haug, Rolf J.
|
|
dc.contributor.author |
Ploog, K.
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dc.date.accessioned |
2018-02-23T12:31:19Z |
|
dc.date.available |
2018-02-23T12:31:19Z |
|
dc.date.issued |
2001 |
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dc.identifier.citation |
Dorozhkin, S.I.; Smet, J.H.; von Klitzing, K.; Umansky, V.; Haug, R.J.; Ploog, K.: Comparison between the compressibilities of the zero field and composite-fermion metallic states of the two-dimensional electron system. In: Physical Review B 63 (2001), Nr. 12, 121301. DOI: https://doi.org/10.1103/PhysRevB.63.121301 |
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dc.description.abstract |
We have studied the capacitance between a two-dimensional electron system and a gate of field-effect transistors, produced from three different wafers with a single remotely doped GaAs/AlxGa1-xAs heterojunction. In the vicinity of the Landau-level filling factor v=1/2, the increment of the capacitance relative to its zero-magnetic-field value, δC1/2, was found to be insensitive to the carrier density, and close to the value as if the particles are noninteracting. This observation implies that electron-electron interaction affects the compressibility of the zero-field and composite-fermion metallic states in a very similar manner. |
eng |
dc.language.iso |
eng |
|
dc.publisher |
College Park, MD : American Physical Society |
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dc.relation.ispartofseries |
Physical Review B 63 (2001), Nr. 12 |
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dc.rights |
Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. |
|
dc.subject |
aluminum |
eng |
dc.subject |
arsenic |
eng |
dc.subject |
gallium |
eng |
dc.subject |
article |
eng |
dc.subject |
chemical interaction |
eng |
dc.subject |
density |
eng |
dc.subject |
electron |
eng |
dc.subject |
magnetic field |
eng |
dc.subject |
semiconductor |
eng |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Comparison between the compressibilities of the zero field and composite-fermion metallic states of the two-dimensional electron system |
eng |
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
01631829 |
|
dc.relation.doi |
https://doi.org/10.1103/PhysRevB.63.121301 |
|
dc.bibliographicCitation.issue |
12 |
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dc.bibliographicCitation.volume |
63 |
|
dc.bibliographicCitation.firstPage |
121301 |
|
dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
|