Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

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dc.identifier.uri http://dx.doi.org/10.15488/2839
dc.identifier.uri http://www.repo.uni-hannover.de/handle/123456789/2865
dc.contributor.author Agafonov, Oleksiy B.
dc.contributor.author Dais, Christian
dc.contributor.author Grützmacher, Detlev
dc.contributor.author Haug, Rolf J.
dc.date.accessioned 2018-02-23T10:08:41Z
dc.date.available 2018-02-23T10:08:41Z
dc.date.issued 2010
dc.identifier.citation Agafonov, O.B.; Dais, C.; Grützmacher, D.; Haug, R.J.: Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots. In: Applied Physics Letters 96 (2010), Nr. 22, 222107. DOI: https://doi.org/10.1063/1.3442508
dc.description.abstract Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a steplike behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Ge quantum dots. Assuming parabolic confinement, we extract the strength of the confinement potential of quantum dots. © 2010 American Institute of Physics. eng
dc.language.iso eng
dc.publisher College Park, MD : American Institute of Physics
dc.relation.ispartofseries Applied Physics Letters 96 (2010), Nr. 22
dc.rights Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
dc.subject Confinement potential eng
dc.subject Double barriers eng
dc.subject Ge quantum dot eng
dc.subject Heterostructures eng
dc.subject Hole state eng
dc.subject Magnetotunneling eng
dc.subject Ordered array eng
dc.subject Parabolic confinements eng
dc.subject Quantum confinement effects eng
dc.subject Quantum Dot eng
dc.subject Self assembled quantum dots eng
dc.subject Si/Ge eng
dc.subject Zero bias eng
dc.subject Germanium eng
dc.subject Resonant tunneling eng
dc.subject Resonant tunneling diodes eng
dc.subject Semiconductor diodes eng
dc.subject Semiconductor quantum dots eng
dc.subject Current voltage characteristics eng
dc.subject.ddc 530 | Physik ger
dc.title Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots
dc.type Article
dc.type Text
dc.relation.issn 00036951
dc.relation.doi https://doi.org/10.1063/1.3442508
dc.bibliographicCitation.issue 22
dc.bibliographicCitation.volume 96
dc.bibliographicCitation.firstPage 222107
dc.description.version publishedVersion
tib.accessRights frei zug�nglich


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