dc.identifier.uri |
http://dx.doi.org/10.15488/2829 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/2855 |
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dc.contributor.author |
Regul, J.
|
|
dc.contributor.author |
Keyser, U.F.
|
|
dc.contributor.author |
Paesler, M.
|
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dc.contributor.author |
Hohls, Frank
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|
dc.contributor.author |
Zeitler, U.
|
|
dc.contributor.author |
Haug, Rolf J.
|
|
dc.contributor.author |
Malavé, A.
|
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dc.contributor.author |
Oesterschulze, E.
|
|
dc.contributor.author |
Reuter, D.
|
|
dc.contributor.author |
Wieck, A.D.
|
|
dc.date.accessioned |
2018-02-23T10:08:37Z |
|
dc.date.available |
2018-02-23T10:08:37Z |
|
dc.date.issued |
2002 |
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dc.identifier.citation |
Regul, J.; Keyser, U.F.; Paesler, M.; Hohls, F.; Zeitler, U. et al.: Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip. In: Applied Physics Letters 81 (2002), Nr. 11, S. 2023-2025. DOI: https://doi.org/10.1063/1.1506417 |
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dc.description.abstract |
We use the all-diamond tip of an atomic force microscope for the direct engraving of high-quality quantum point contacts in GaAs/AlGaAs heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm, the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect-free ballistic constrictions show well-resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements. © 2002 American Institute of Physics. |
eng |
dc.language.iso |
eng |
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dc.publisher |
College Park, MD : American Institute of Physics |
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dc.relation.ispartofseries |
Applied Physics Letters 81 (2002), Nr. 11 |
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dc.rights |
Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. |
|
dc.subject |
Atomic force microscopes |
eng |
dc.subject |
Defect-free |
eng |
dc.subject |
Diamond tip |
eng |
dc.subject |
Electronic transport measurements |
eng |
dc.subject |
GaAs/AlGaAs heterostructures |
eng |
dc.subject |
High quality |
eng |
dc.subject |
Orders of magnitude |
eng |
dc.subject |
Processing Time |
eng |
dc.subject |
Quantum point contact |
eng |
dc.subject |
Silicon tips |
eng |
dc.subject |
Atomic force microscopy |
eng |
dc.subject |
Crystals |
eng |
dc.subject |
Diamonds |
eng |
dc.subject |
Etching |
eng |
dc.subject |
Quantum chemistry |
eng |
dc.subject |
Point contacts |
eng |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip |
|
dc.type |
Article |
|
dc.type |
Text |
|
dc.relation.issn |
00036951 |
|
dc.relation.doi |
https://doi.org/10.1063/1.1506417 |
|
dc.bibliographicCitation.issue |
11 |
|
dc.bibliographicCitation.volume |
81 |
|
dc.bibliographicCitation.firstPage |
2023 |
|
dc.bibliographicCitation.lastPage |
2025 |
|
dc.description.version |
publishedVersion |
|
tib.accessRights |
frei zug�nglich |
|