dc.identifier.uri |
http://dx.doi.org/10.15488/2826 |
|
dc.identifier.uri |
http://www.repo.uni-hannover.de/handle/123456789/2852 |
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dc.contributor.author |
Schumacher, Hans W.
|
|
dc.contributor.author |
Keyser, U.F.
|
|
dc.contributor.author |
Zeitler, U.
|
|
dc.contributor.author |
Haug, Rolf J.
|
|
dc.contributor.author |
Eberl, K.
|
|
dc.date.accessioned |
2018-02-23T10:08:36Z |
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dc.date.available |
2018-02-23T10:08:36Z |
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dc.date.issued |
1999 |
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dc.identifier.citation |
Schumacher, H.W.; Keyser, U.F.; Zeitler, U.; Haug, R.J.; Eberl, K.: Nanomachining of mesoscopic electronic devices using an atomic force microscope. In: Applied Physics Letters 75 (1999), Nr. 8, S. 1107-1109. DOI: https://doi.org/10.1063/1.124611 |
|
dc.description.abstract |
An atomic force microscope (AFM) is used to locally deplete the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The depletion is induced by repeated mechanical scribing of the surface layers of the heterostructure using the AFM tip. Measuring the room-temperature resistance across the scribed lines during fabrication provides in situ control of the depletion of the 2DEG. Variation of the room-temperature resistance of such lines tunes their low-temperature characteristics from tunneling up to insulating behavior. Using this technique, an in-plane-gate transistor and a single-electron transistor were fabricated. © 1999 American Institute of Physics. |
eng |
dc.language.iso |
eng |
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dc.publisher |
College Park, MD : American Institute of Physics |
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dc.relation.ispartofseries |
Applied Physics Letters 75 (1999), Nr. 8 |
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dc.rights |
Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. |
|
dc.subject |
AFM |
eng |
dc.subject |
2DEG |
eng |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Nanomachining of mesoscopic electronic devices using an atomic force microscope |
eng |
dc.type |
Article |
|
dc.type |
Text |
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dc.relation.issn |
00036951 |
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dc.relation.doi |
https://doi.org/10.1063/1.124611 |
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dc.bibliographicCitation.issue |
8 |
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dc.bibliographicCitation.volume |
75 |
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dc.bibliographicCitation.firstPage |
1107 |
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dc.bibliographicCitation.lastPage |
1109 |
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dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
|