Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas

Bockhorn, L.; Gornyi, I.V.; Schuh, D.; Wegscheider, W.; Haug, Rolf J.

Original version

Bockhorn, L.; Gornyi, I.V.; Schuh, D.; Wegscheider, W.; Haug, R.J.: Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas. In: AIP Conference Proceedings 1566 (2013), S. 289-290. DOI: https://doi.org/10.1063/1.4848399

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To cite the version in the repository, please use this identifier: https://doi.org/10.15488/2805

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Abstract:
A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al0.3Ga0.7As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder. © 2013 AIP Publishing LLC.
License of this version:	Es gilt deutsches Urheberrecht. Das Dokument darf zum eigenen Gebrauch kostenfrei genutzt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
Publication type:	Article
Publishing status:	publishedVersion
Publication date:	2013
Keywords english:	Electron Interaction Correction, Fractional Quantum Hall Effect, Negative Magnetoresistance, Electron gas, Quantum Hall effect, Electron-interaction corrections, Fractional quantum Hall effects, GaAs, High mobility, Interaction corrections, Negative magneto-resistance, Magnetoresistance
DDC:	530 \| Physik
Controlled keywords(GND):	Konferenzschrift