Kamata, N.; Klausing, H.; Fedler, F.; Mistele, D.; Aderhold, J. et al.: Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AIGaN quantum well. In: EPJ Applied Physics 27 (2004), S. 271-273. DOI:
https://doi.org/10.1051/epjap:2004128
Zusammenfassung: |
In order to improve the crystal quality of GaN-based light emitting devices, photoluminescence (PL) characterization of below-gap states in plasma assisted MBE-grown GaN/AlGaN quantum well (QW) structures has been done by utilizing a below-gap excitation (BGE) light in addition to an above-gap excitation light. The decrease of the band-edge PL intensity due to the addition of the BGE of 1.17 eV indicates the presence of an energy-matched below-gap state in the two-wavelength excited PL. In continuation to our previous efficiency improvement by applying modulation-doping to GaAs/AlGaAs QW's. we focused on several undopcd and Si-doped GaN/AlGaN QW's. Experimental results showed that Si modulation-doping reduces the density of below-gap states in the QW region, hence it is promising for increasing internal quantum efficiency of GaN-based QW's.
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Lizenzbestimmungen: |
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Publikationstyp: |
Article |
Publikationsstatus: |
publishedVersion |
Erstveröffentlichung: |
2004 |
Schlagwörter (englisch): |
Gallium nitride, Impurities, Light emitting diodes, Luminescence, Metallorganic chemical vapor deposition, Modulation, Molecular beam epitaxy, Optimization, Photons, Quantum efficiency, Semiconducting aluminum compounds, Semiconductor doping, Strain, Stress relaxation, Above-gap excitation (AGE), Below-gap excitation (BGE), III-V semiconductors, Photon energies, Semiconductor quantum wells
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Fachliche Zuordnung (DDC): |
530 | Physik
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