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Original version
Gogolin, R.; Zielke, D.; Descoeudres, A.; Despeisse, M.; Ballif, C.; Schmidt, J.: Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells. In: Energy Procedia 124 (2017), S. 593-597. DOI: https://doi.org/10.1016/j.egypro.2017.09.295
Repository version
To cite the version in the repository, please use this identifier:
https://doi.org/10.15488/2219
Files in this item
| Abstract: | |
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In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon. © 2017 The Authors. Published by Elsevier Ltd.
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| License of this version: | CC BY-NC-ND 4.0 Unported - https://creativecommons.org/licenses/by-nc-nd/4.0/ |
| Publication type: | Article |
| Publishing status: | publishedVersion |
| Publication date: | 2017 |
| Keywords english: | heterojunctions, PEDOT:PSS, solar cells, Voc potential, Crystalline materials, Heterojunctions, Passivation, Silicon, Silicon solar cells, Silicon wafers, Solar cells, a-Si:H, Crystalline silicon wafers, Crystalline silicons, Hole selective layers, Layer stacks, PEDOT:PSS, Surface passivation, Conducting polymers |
| DDC: | 333,7 | Natürliche Ressourcen, Energie und Umwelt |
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Fakultät für Mathematik und Physik
Frei zugängliche Publikationen aus der Fakultät für Mathematik und Physik